Non-polarized composite gallium nitride substrate lining and production method

Abstract

This invention discloses a method for producing a non-polar compound GaN base substrate, in which, the structure of the substrate is reflection / ohm / stress buffer layer laminated between a support substrate and non-polar GaN base epitaxial layer, the method includes: growing an intermediate layer( or a germ layer) and a non-polar first GaN base epitaxial layer orderly on the substrate, laminating a mask layer, etching the mask layer to form a GaN window and mask layer strips, growing a non-polar second GaN base epitaxial layer, laminating the reflection / ohm / stress buffer layer, bonding the support substrate, peeling off the growing substrate, the intermediate layer, the non-polar first GaN base epitaxial layer, the mask layer strips and the cavity part in the non-polar second GaN base epitaxial layer and exposing the part without cavities to be heat-processed.

Description

technical field [0001] The invention discloses a non-polar compound gallium nitride base substrate, which belongs to the technical field of semiconductor electronics. Background technique [0002] Currently, in industry, c-sapphire substrate is used as one of the main growth substrates for growing GaN-based devices (including GaN-based LEDs). However, there are the following disadvantages: (1) There is a built-in polarization electric field in the GaN-based epitaxial layer, which reduces the combination efficiency of electrons and holes in the GaN-based epitaxial layer, thus reducing the GaN-based epitaxial layer. The internal quantum efficiency of the device. (2) Sapphire is a material with low thermal conductivity, and the heat dissipation problem of high-power devices needs to be solved. [0003] In order to overcome the above-mentioned deficiencies, industries and research institutions adopt the following schemes. (1) In order to eliminate the built-in polarization el...

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Problems solved by technology

However, there are the following disadvantages: (1) There is a built-in polarization electric field in the GaN-based epitaxial layer, which reduces the combination efficiency of electrons and holes in the GaN-based epitaxial layer, thus reducing the GaN-based epitaxial layer. The internal quantum efficiency of the device

(2) Sapphire is a material with low thermal conductivity, and the heat dissipation problem of high-power devices needs to be solved

[0004] However, the disadvantage of the lateral epitaxy method in scheme (1) is that there are voids in the gallium nitride-based epitaxial layer, which is easy to deform at high temperature, and the device is easy to be broken down, etc.

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