Power semiconductor device with L shaped source

A power semiconductor and source region technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reduced breakdown voltage, affecting the channel, inability to control the threshold voltage, etc., to achieve increased channel density and reduced cellpitch. Effect
CN1862830AInactive Publication Date: 2006-11-15ONIZUKA ELECTRONICS
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
ONIZUKA ELECTRONICS
Publication Date
2006-11-15
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

This invention relates to L type source region power semiconductor device. It includes one substrate, one trap area formed in the substrate, one body area formed on trap area, one groove grid formed at both sides of the trap area, one grid oxide layer is formed on the lateral wall and bottom surface of the groove grid, one L type source region, and one flat roof area and one straight lateral area are formed on roof and sides of the body, one dielectric insulating layer formed on the groove grid area and part of the L type area, and one contact window is defined, one metal layer formed on the insulating layer, the body and the L type area, and it is connected to the L type area through the contact window to form the power semiconductor device with L type area flush type groove grid.
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Description

technical field

[0001] The present invention relates to a power semiconductor device structure, in particular to a power semiconductor device structure with an L-shaped source region. Background technique

[0002] In recent years, power semiconductor devices, such as metal oxide semiconductor field effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), junction field effect transistor (Junction FieldEffect Transistor, JFET) or rectifier diodes (Rectifier), etc., have made extremely good progress in their operational performance and manufacturing process. However, in order to further improve the characteristics of the device and reduce the manufacturing cost, one of the main trends is to use the so-called trench-gated technology. However, when using this trench gate technology, the cell pitch of the device is reduced, and the device channel density of the device is significantly increased. Such a low on-state power loss can be achieved by forming low on-resis...

Claims

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