Process of preparing single-layer nanometer TiO2 rod film in pure rutile structure

A technology of titanium dioxide and nanorods, which is applied in the field of preparing pure rutile structure titanium dioxide nanorod single-layer films, can solve problems such as difficulties, and achieve the effect of simple method, uniformity and good repeatability of pure rutile structure titanium dioxide nanorod single-layer films

A technology of titanium dioxide and nanorods, which is applied in the field of preparing pure rutile structure titanium dioxide nanorod single-layer films, can solve problems such as difficulties, and achieve the effect of simple method, uniformity and good repeatability of pure rutile structure titanium dioxide nanorod single-layer films

CN1888135AInactive Publication Date: 2007-01-03ZHEJIANG UNIV

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  • Process of preparing single-layer nanometer TiO2 rod film in pure rutile structure
  • Process of preparing single-layer nanometer TiO2 rod film in pure rutile structure
  • Process of preparing single-layer nanometer TiO2 rod film in pure rutile structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] 1) Preparation of pickling solution

[0028] The hydrofluoric acid with a mass concentration of 55%, nitric acid with a mass concentration of 65% and deionized water are mixed in a volume ratio of 1:3:6 to obtain an acid lotion.

[0029] 2) Prepare reaction solution A

[0030] Add 1.0 ml of nitric acid with a mass concentration of 63% and 100 mg of hexamethine (mass percentage purity> 99.5%) to 50 ml of a 30% hydrogen peroxide solution in order to obtain a reaction solution A.

[0031] 3) Prepare reaction solution B

[0032] The size is 5×5×0.01 (cm 3 ) The surface of the titanium metal plate is pickled with the pickling solution obtained in step 1) at a temperature of 60° C., and then cleaned with deionized water in ultrasonic waves.

[0033] The cleaned titanium metal plate was immersed in 50 ml of reaction solution A, and reacted at 80° C. for 52 hours to obtain the remaining reaction solution, that is, reaction solution B.

[0034] 4) Preparation of titanium substrate

...

Embodiment 2

[0042] 1) Preparation of pickling solution

[0043] The same as in Example 1.

[0044] 2) Prepare reaction solution A

[0045] The same as in Example 1.

[0046] 3) Prepare reaction solution B

[0047] The surface cleaning of the titanium metal plate is the same as in Example 1; the cleaned titanium metal plate is immersed in 50 ml of reaction solution A and reacted at 80° C. for 56 hours to obtain the remaining reaction solution, namely, reaction solution B.

[0048] 4) Preparation of titanium substrate

[0049] The same as in Example 1.

[0050] 5) Reaction

[0051] The above-mentioned titanium substrate was immersed in the reaction solution B and reacted at 80° C. for 16 hours. The titanium substrate after the reaction was rinsed with deionized water and dried.

[0052] Reaction result

[0053] After the reaction, the surface of the titanium substrate was uniformly bright green, and the formation of Figure 4 As shown in the single-layer nanorod film, the thickness of the film ...

Embodiment 3

[0055] 1) Preparation of pickling solution

[0056] Mixing hydrofluoric acid with a mass percentage concentration of 50%, nitric acid with a mass percentage concentration of 68% and deionized water in a volume ratio of 1:4:7 to obtain an acid lotion.

[0057] 2) Prepare reaction solution A

[0058] 0.5 ml of nitric acid with a mass concentration of 63% and 70 mg of hexamethine (mass percentage purity>99.5%) were sequentially added to 50 ml of a 30% hydrogen peroxide solution to obtain a reaction solution A.

[0059] 3) Prepare reaction solution B

[0060] The size is 5×5×0.01 (cm 3 ) The surface of the titanium metal plate is pickled with the pickling solution obtained in step 1) at a temperature of 60° C., and then cleaned with deionized water in ultrasonic waves.

[0061] The cleaned titanium metal plate was immersed in 50 ml of reaction solution A, and reacted at 60° C. for 48 hours to obtain the remaining reaction solution, that is, reaction solution B.

[0062] 4) Preparation...

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Abstract

The preparation process of single-layer nanometer TiO2 rod film in pure rutile structure includes the following steps: mixing hydrofluoric acid, nitric acid and deionized water to compound acid pickling solution; adding nitric acid and hexamethylenetetramine to obtain reactant solution A; pickling metal titanium plate with the acid pickling solution, soaking the pickled metal titanium plate inside the reactant solution A for reaction at 60-80 deg.c of 24-60 hr to obtain reactant solution B after taking out the plate; pickling one other metal titanium plate, soaking the pickled metal titanium plate inside hydrogen peroxide solution for reaction at 60-80 deg.c of 5-15 min, taking out the plate and washing with deionized water to obtain titanium base plate; soaking the titanium base plate inside the reactant solution B for reaction at 60-80 deg.c over 12 hr, washing the reacted titanium base plate with deionized water and drying to obtain the nanometer TiO2 rod film.

Description

Technical field [0001] The invention relates to a method for preparing a single-layer film of titanium dioxide nanorods with a pure rutile structure. Background technique [0002] Nanostructured titanium dioxide films have a wide range of applications in high-tech fields such as photocatalysis, gas sensors, solar cells, biomaterials, and nanodevices. The preparation of directionally grown ordered nanostructured titanium dioxide single-layer ultra-thin films is the basis for constructing some nanodevices. However, it is still difficult to obtain large-area and uniform films with the above-mentioned fine structure. [0003] In addition, the preparation of crystalline nano-films under low temperature conditions can avoid the heat treatment process that promotes the crystallization of the film in the conventional preparation technology, thereby avoiding the defects of film grain growth, specific surface area reduction, and film cracking caused by heat treatment. Summary of the inven...

Claims

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Application Information

Patent Timeline
03 Jan 2007
Publication
CN1888135A
IPC
C23C22/05; C23G1/10; C23G5/00; B08B3/12
Inventors
吴进明