Barrier coating compositions for photoresist and methods of forming photoresist patterns using the same

A composition and photoresist technology are applied in the field of barrier coating compositions for photoresist and the use of the composition to form photoresist patterns, which can solve problems such as damage to photoresist properties, contamination of lenses, and the like, and achieve The effect of reducing material cost, simplifying manufacturing process, and reducing manufacturing cost

Inactive Publication Date: 2007-02-14
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, the use of water as the immersion medium can lead to several problems including, for example, the tendency of components of the photoresist such as photoacid generators (PAGs) and / or substrates to leach from the photoresist into the water, by This impairs the performance of the photoresist and / or contaminates the lens

Method used

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  • Barrier coating compositions for photoresist and methods of forming photoresist patterns using the same
  • Barrier coating compositions for photoresist and methods of forming photoresist patterns using the same
  • Barrier coating compositions for photoresist and methods of forming photoresist patterns using the same

Examples

Experimental program
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Effect test

example 1

[0064] example 1. Polymerized silicon-containing polymers (1)

[0065]

[0066] In a round bottom flask, 4.3 g (10 mmol) of tris(trimethylsiloxane) silypropyl methacrylate (obtained from Aldrich Chemical), 0.5 g (5 mmol) of methacrylic acid and 5 mol% of azobisisobutyronitrile (AIBN) was dissolved in 20 ml of anhydrous THF and then purged with nitrogen. The mixture was then polymerized under nitrogen at a temperature of about 65°C for 24 hours.

[0067] After polymerization, the polymeric material was precipitated in excess water and filtered. The polymerized retentate was then dried in a vacuum oven at a temperature of about 50° C. for 24 hours. The calculated polymerization yield was 70%, and the resulting polymeric material exhibited a weight average molecular weight (Mw) of 14,800 Daltons and a polydispersity (Mw / Mn) of 1.8.

example 2

[0068] Example 2. Polymerized silicon-containing polymers (2)

[0069]

[0070] In a round bottom flask were placed 4.3 grams (10 mmol) of tris(trimethylsiloxy) silypropyl methacrylate (obtained from Aldrich Chemical), 0.5 grams (3 mmol) of methacrylic acid, 4.0 g (3 mmol) of 2-hydroxyethyl methacrylate and 5 mol% of AIBN were dissolved in 35 ml of anhydrous THF and purged with nitrogen. The mixture was then polymerized at a temperature of about 65° C. for 24 hours under nitrogen.

[0071] After polymerization, the polymeric material was precipitated in excess water and then filtered. The polymer retentate was then dried in a vacuum oven at a temperature of about 50°C for 24 hours. The calculated polymerization yield was 75%, and the resulting polymeric material exhibited a weight average molecular weight (Mw) of 12,500 Daltons, and a polydispersity (Mw / Mn) of 1.8.

example 3

[0072] Example 3. Polymerized silicon-containing polymers (3)

[0073]

[0074] In a round bottom flask were placed 4.3 grams (10 mmol) of tris(trimethylsiloxy) silypropyl methacrylate (obtained from Aldrich Chemical), 1.3 grams (13 mmol) of maleic anhydride, 0.3 g (3 mmol) of methacrylic acid and 4 mol of AIBN were dissolved in 10 ml of anhydrous THF, then purged with nitrogen. Next, the mixture was polymerized under nitrogen at a temperature of about 65° C. for 24 hours.

[0075] After polymerization, the polymeric material is precipitated in excess water and then filtered. The polymer retentate was dried in a vacuum oven at a temperature of about 50°C for 24 hours. The calculated polymerization yield was 45%, and the resulting polymeric material exhibited a weight average molecular weight (Mw) of 8,500 Daltons and a polydispersity (Mw / Mn) of 2.0.

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Abstract

Provided are barrier polymers, barrier coating compositions incorporating such polymers and methods for utilizing such barrier coating compositions for suppressing dissolution of photoresist components during immersion photolithography. The barrier polymers may be synthesized from one or more monomers including at least one monomer having a tris(trimethylsiloxy)silyl group and will have a weight average molecular weight (Mw) of 5,000 to 200,000 daltons. The barrier polymer(s) may be combined with one or more organic solvents to form a barrier coating composition that can be applied to a photoresist layer to form a barrier coating layer sufficient to suppress dissolution of components such as PAG into an immersion liquid during exposure processing. The tris(trimethylsiloxy)silyl group monomer(s) may be combined with other monomers, particularly monomers including a polar group, for modifying the hydrophobicity and / or solubility of the resulting barrier coating layer in, for example, a developing solution.

Description

[0001] priority statement [0002] This application claims priority under 35 U.S.C. 119 to Korean Patent Application No. 10-2005-0074482 filed with the Korean Intellectual Property Office on Aug. 12, 2005, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0003] Embodiments of the present invention include polymeric compounds and compositions comprising such compounds, as well as methods utilizing such compounds and compositions, which may be used to form top or barrier coatings for protecting underlying light Resist composition. For example, the compounds and compositions according to the embodiments of the present invention may be used in the manufacture of semiconductor integrated circuits, particularly in methods related to the formation of photoresist layers and patterns having top or barrier coatings, such as , will improve the performance of the photoresist during immersion lithography. Background technique [0004] In th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/16G03F7/20G03F7/26G03F7/00G03F7/11H01L21/027
CPCG03F7/2041G03F7/0752G03F7/11G03F7/0758
Inventor 崔相俊畑光宏
Owner SAMSUNG ELECTRONICS CO LTD
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