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Novel tarc material for immersion watermark reduction and method for immersion watermark reduction

A technology of coating materials and lithography process, applied in photosensitive materials used in optomechanical equipment, photosensitive material processing, photography, etc., can solve problems such as inconvenience and general products without structure

Active Publication Date: 2007-04-04
TAIWAN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] This shows that the above-mentioned existing top anti-reflection coating material obviously still has inconvenience and defects in structure and use, and needs to be further improved urgently.
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general products do not have a suitable structure to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve

Method used

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  • Novel tarc material for immersion watermark reduction and method for immersion watermark reduction
  • Novel tarc material for immersion watermark reduction and method for immersion watermark reduction
  • Novel tarc material for immersion watermark reduction and method for immersion watermark reduction

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Embodiment Construction

[0046] In order to further illustrate the technical means and effects of the present invention to achieve the intended purpose of the invention, below in conjunction with the accompanying drawings and preferred embodiments, a kind of coating on a photoresist layer proposed according to the present invention is used for immersion lithography The specific implementation, structure, characteristics and effects of the coating material of the manufacturing process are described in detail below.

[0047] FIG. 1 is a cross-sectional view of a semiconductor device 100 according to an embodiment of the present invention. The semiconductor device 100 may be a semiconductor wafer or other suitable devices. The semiconductor device 100 may include a substrate 110 and an organic bottom anti-reflective layer, an inorganic bottom anti-reflective layer, an organic etch stop layer, an organic adhesive layer, various doped layers, a dielectric layer, and a multilayer interconnection on the subs...

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Abstract

A coating material disposed over a photosensitive layer comprises an acid capable of neutralizing a base quencher from the photosensitive layer; and a polymer that is a carrier of the acid and is insoluble to an immersion fluid used in an immersion lithography process. The acid is chemically bonded to the polymer or mixed to the polymer. The acid is an organic acid comprising a sulfonyl acid group. The polymer comprises fluoride. The coating material is soluble in tetramethylammonium hydroxide (TMAH) solution or cyclohexanol. An independent claim is included for a method for immersion lithography.

Description

technical field [0001] The invention relates to a top anti-reflective coating (top anti-reflective coating, TARC) material, in particular to a top anti-reflective coating material coated on a photoresist layer for an immersion lithography process and an immersion microlithography shadow method. Background technique [0002] In order to allow semiconductor manufacturing technology to continue to advance to a smaller size (such as 65 nanometers and below 45 nanometers), the latest semiconductor manufacturing technology uses immersion lithography. However, immersion lithography leaves water droplets after exposure. Residual water droplets will cause watermark defects, thereby reducing the quality of semiconductor manufacturing and causing manufacturing errors. Therefore, there is a need for a new type of top anti-reflection coating material that can reduce or avoid watermark defects. [0003] It can be seen that the above-mentioned existing top anti-reflection coating materi...

Claims

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Application Information

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IPC IPC(8): G03F7/004G03F7/20G03F7/26H01L21/027
CPCG03F7/11G03F7/2041G03F7/091Y10S430/111G02B1/111G03F7/09
Inventor 张庆裕
Owner TAIWAN SEMICON MFG CO LTD
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