Semiconductor back-end linked thread using glass contained F-Si as dielectric substance
A dielectric and semiconductor technology, applied in the field of semiconductor back-end connection, can solve the problems of short electromigration life, peeling, electromigration failure, etc., and achieve the effect of high product qualification rate, good integrity, and improved electromigration life
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[0019] As shown in Figures 2 and 4, first, metal lines are formed, see Figure 4a; secondly, the high refractive index oxide grown by the plasma enhanced chemical vapor deposition method is used as the backing oxide layer in the PECVD equipment, see Figure 4b Wherein, the backing oxide layer is silicon oxide, silicon oxynitride, silicon nitride or a combination thereof, the backing oxide film has a refractive index greater than 1.48 and a thickness greater than 12nm and less than 80nm. The third step is to use high-density plasma chemical vapor deposition to grow FSG and deposit FSG as the dielectric, see Figure 4c; the fourth step, after the FSG dielectric is grown, cover its surface with a layer of normal refractive index silicon oxide Or tetraethoxysilane, and then planarize it by chemical mechanical polishing, see Figure 4d. In this step, the silicon oxide or tetraethoxy silane can be directly flattened by chemical mechanical polishing without covering it with silicon oxide or ...
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