Metal-insulator-metal capacitor

Abstract

This invention puts forward a MIM capacitor including a lower electrode, an upper electrode and a capacitor medium layer, in which, the upper electrode is placed at the lower electrode, the capacitor medium layer is placed between the upper and lower electrodes, the medium layer includes multiple TiO2 layers and at least one square crystal structure material layer, and the square crystal structure material layer is placed between two TiO2 layers and the thickness of the material layers is the same or different, which can cut off leakage paths with the help of the square crystal material layers among TiO2 layers and can induce it to generate rutile phase of high dielectric constant.

Description

technical field [0001] The present invention relates to a metal-insulator-metal (Metal-Insulator-Metal, abbreviated as MIM) capacitor, and in particular to a metal-insulator-metal capacitor with a high dielectric constant (highk) capacitance dielectric layer and low leakage. Background technique [0002] Semiconductor memory mainly includes transistors and capacitors, and when semiconductor memory enters a high-aspect-ratio process, it means that the space available for capacitors on components is reduced. As the storage space required by computer software grows rapidly, the required capacitance also increases. Therefore, in order to meet such demands, semiconductor process technology must be changed in process technology. [0003] The current method to increase capacitance without wasting space is to use a high dielectric constant (high-k) material as an insulating layer to manufacture a metal-insulator-metal (MIM) capacitor in order to obtain sufficient capacitance in a r...

AI Technical Summary

Problems solved by technology

However, to make TiO 2 The transformation from the anatase phase formed by the general atomic layer deposition (Atomic Layer Deposition, ALD) to the rutile phase usually requires high-temperature calcination (about 700 degrees Celsius or more) to achieve phase transfer. ), such a high temperature will cause damage to other layer materials (damage)

In addition, because TiO 2 The energy band gap (band gap) is small, so there are serious leakage problems

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