Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process

a technology of metal oxide dielectric material and fabrication process, which is applied in the direction of coating, capacitor, chemical vapor deposition coating, etc., can solve the problems of shortened battery life of portable devices such as cellular telephones and laptop computers, leakage of charge carriers, and longer functions as effective insulators, so as to achieve the effect of driving current and high carrier mobility
US20050042846A1Inactive Publication Date: 2005-02-24GREEN MARTIN L +1
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
GREEN MARTIN L
Publication Date
2005-02-24
Estimated Expiration
Not applicable · inactive patent

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Abstract

A method of forming an annealed high-K metal oxide transistor gate structure is disclosed. A metal oxide layer is formed over a semiconductor substrate. The metal oxide layer undergoes a buffered annealed process in an oxygen atmosphere to anneal the metal oxide layer at or below the thermodynamic chemical equilibrium of SiO / SiO2 and at or above the thermodynamic chemical equilibrium of the metal oxide layer.
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Description

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to the field of semiconductor devices, and more specifically to a fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant.

[0003] 2. Description of the Related Art

[0004] As the dimensions of the MOS transistor are scaled down, the thickness of its gate oxide, typically SiO2, decreases accordingly. Reducing the SiO2 layer to an ultrathin thickness results in charge carrier leakage by tunneling conduction as the ultrathin SiO2 gate oxide layer no longer functions as an effective insulator.

[0005] Tunneling conduction also causes a faster dissipation of stored charge resulting in, for example, shortened battery life in portable devices such as cellular telephones and laptop computers. Typically, the gate dielectric layer used in a MOS transistor is an SiO2 layer which has a dielectric constant of 3.9. Alternative gate oxide m...

Claims

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