Superconducting material and method of synthesis

a superconducting material and compound technology, applied in the direction of superconductor details, superconductor devices, magnetic bodies, etc., can solve the problems of hsub>irr /sub>for the doped samples not as good as the undoped ones, and remain controversial

Inactive Publication Date: 2005-11-03
UNIV OF WOLLONGONG
View PDF3 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008] Advantageously, the factors of critical current density, irreversibility field and flux pinning properties of MgB2 are significantly improved by chemical doping with SiC, potentially paving the way for MgB2 to replace the current market leaders NbTi and Ag / Bi2223.

Problems solved by technology

In all the studies on wires and bulk made from MgB2, Jc decreased more than 90% of its zero field value at 3 T within this temperature range due to the poor pinning ability of this material.
Several attempts have been made to improve flux pinning using chemical doping, but the results remain controversial.
Furthermore, the results for doping into MgB2 are largely limited to addition rather than substitution.
However, Hirr for the doped samples is not as good as the undoped ones at 20K.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Superconducting material and method of synthesis
  • Superconducting material and method of synthesis
  • Superconducting material and method of synthesis

Examples

Experimental program
Comparison scheme
Effect test

example 1

Synthesis of (Mg+2B)1−x(SiC)x through nanoparticle SiC doping into MgB2

[0054] (Mg+2B)1−x(SiC)x samples were prepared by a reaction in-situ method. Powders of magnesium (99% purity) and amorphous boron (99% purity) were well mixed with SiC additive with the atomic ratio of (Mg+2B)1−x(SiC)x where x=0, 0.057, 0.117, 0.23 and 0.34 for samples 1 to 5 respectively (Table 1). The mixed powders were loaded into Fe tubes. The composite tubes were groove-rolled, sealed in a Fe tube and then directly heated at preset temperatures to 950° C. for 3 hours, in the presence of flowing high purity Ar. This was followed by quenching to liquid nitrogen temperature. Table 1 provides information, with samples 1, 2, and 3 being the undoped and doped with 5 wt % and 10 wt % MgO respectively.

[0055] The magnetization of 1.0×1.0×0.8 mm3 samples was measured over a temperature range of 5 to 30 K-using a Physical Property Measurement System (PPMS, Quantum Design) in a time-varying magnetic field of sweep rat...

example 2

Synthesis of MgB2−x(SiC)x using nanoparticle SiC to react with Mg and B

[0056] MgB2−x(SiC)x samples were prepared by a reaction in-situ method. Powders of magnesium (99% purity) and amorphous boron (99% purity) were thoroughlymixed with SiC additive, to prepare various samples with the following ratios of MgB2−x(SiC)x: X=0, 0.02, 0.05, 0.1, 0.15, 0.2, 0.5, 1.0, 1.5 and 2.0. The mixed powders were loaded into Fe tubes. The composite tubes were groove-rolled, sealed in a Fe tube and then directly heated at preset temperatures to 900° C., for 3 hours in the presence of flowing high purity Ar. This was followed by quenching to liquid nitrogen temperature.

example 3

Synthesis of MgB2−x−ySixCy using Mg, B, Si and C powders

[0057] MgB2 pellet samples were prepared by a reaction in-situ method. Powders of magnesium (99% purity) and amorphous boron (99% purity) were well mixed with SiC additive with the ratio of Mg+B2−x(SiC)x where x=0, 0.02, 0.05, 0.1, 0.15, 0.2, 0.5, 1.0, 1.5 and 2.0. The mixed powders were loaded into Fe tubes. The composite tubes were groove-rolled, sealed in a Fe tube and then directly heated at preset temperatures to 900° C., for 3 hours in flowing high purity Ar. This was followed by quenching to liquid nitrogen temperature.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
temperatureaaaaaaaaaa
temperatureaaaaaaaaaa
temperatureaaaaaaaaaa
Login to view more

Abstract

The present invention relates to a superconducting material, and in particular to a magnesium borate superconductor which is doped with a silicon carbide or titanium carbide dopant.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a superconducting compound and to a method of synthesising a superconducting compound, and, particularly, but not exclusively, a superconducting compound based on magnesium diboride and a method of synthesis thereof. BACKGROUND OF THE INVENTION [0002] Significant progress has been made in improving the critical current density (Jc) in various forms of MgB2 since superconductivity in this compound was discovered [1]. MgB2 exhibits the superconducting characteristics and physics of BCS-type LTS (low-temperature superconductor) materials, as evidenced for example by a significant isotope effect [2]; however, its critical temperature (Tc) is more than twice those of the presently used superconductors Nb3Sn and Nb3Al, and more than four times that of the present LTS workhorse, NbTi. The importance of MgB2 lies in its simple crystal structure, high critical temperature Tc, high critical current density (Jc), and large coherenc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(United States)
IPC IPC(8): C01B35/04C01G1/00C04B35/565H01L39/12H01L39/24
CPCB82Y30/00H01L39/2487C04B35/565C04B35/58057C04B2235/3206C04B2235/3409C04B2235/3804C04B2235/3808C04B2235/3817C04B2235/3826C04B2235/3843C04B2235/401C04B2235/421C04B2235/422C04B2235/428C04B2235/5454C04B2235/761C04B2235/77C04B2235/80H01L39/125C04B35/5611Y10S420/901H10N60/855H10N60/0856
Inventor DOU, SHI XUELIU, HAU KUNPAN, ALEXEY VLADIMIROVICHZHOU, SIHAIIONESCU, MIHAIL HORIA
Owner UNIV OF WOLLONGONG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap