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Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film

a technology of silica-based film and film, which is applied in the field of composition for forming a silica-based film, silica-based film, electronic components provided with the silica-based film, etc., can solve the problems of increasing the signal delay time due to the increase in the capacity between wires, the layer tends to further reduce its mechanical strength, and the film strength tends to decrease, so as to prevent interfacial peeling, reduce the adhesion and mechanical strength

Inactive Publication Date: 2006-03-02
HITACHI CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a composition for forming a silica-based film that has an excellent low dielectric property and a sufficient mechanical strength. The composition contains a siloxane resin, an organic solvent containing at least one species of aprotic solvent, and an onium salt. The composition can be cured at a lower temperature in a shorter time as compared with conventional ones, reducing heat input amount and preventing deterioration in materials of the layers. The silica-based film formed using the composition has a low dielectric property and a sufficient mechanical strength, and is suitable for use as an insulating film in electronic components.

Problems solved by technology

In electronic device parts such as semiconductor devices typified by LSI, increases in signal delay time due to increases in the capacity between wires have been becoming problematic as wires have become thinner because of higher integration.
Also, the inventors have found that a layer tends to further lower its mechanical strength if the porosity increases in excess when the mechanical film strength or film hardness of the organic SOG to become a base material of the film is inherently insufficient.
However, the film strength tends to decrease as the relative permittivity decreases, whereby there remains a large problem for conventional processes to be applied thereto.
Also, a long period of about 1 hour is likely to be required until the hardening finally ends.
Therefore, when such a film is used as an interlayer insulating film, there is a fear of the heat input amount (thermal budget) in the film forming process deteriorating other layers, a wiring layer in particular.

Method used

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  • Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film
  • Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film
  • Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film

Examples

Experimental program
Comparison scheme
Effect test

example 1

Making of Composition for Forming Silica-Based Film

[0106] Into a solution formed by dissolving 154.6 g of tetraethoxysilane and 120.6 g of methyltriethoxysilane in 543.3 g of cyclohexanone, 80.98 g of an aqueous solution containing 0.525 g of 70% nitric acid dissolved therein were fed dropwise for 30 minutes while being stirred. Their reaction was carried out for 5 hours after the completion of dropwise feeding, and then thus generated ethanol and cyclohexanone were partly evaporated under reduced pressure in a warm bath, whereby 583.7 g of a polysiloxane solution were obtained. The weight average molecular weight of polysiloxane determined by GPC was 1,350.

[0107] Subsequently, into 553.9 g of the polysiloxane solution, 24.86 g of polypropylene glycol (PPG-725 manufactured by Aldrich Co.), which was a pore forming compound, 498.7 g of cyclohexanone, 17.89 g of 2.38% tetramethylammonium nitrate aqueous solution (pH 3.6), and 5.5 g of 1% diluted maleic acid aqueous solution were add...

example 2

[0108] Into a solution formed by dissolving 154.6 g of tetraethoxysilane and 120.6 g of methyltriethoxysilane in 543.3 g of cyclohexanone, 80.98 g of an aqueous solution containing 0.525 g of 70% nitric acid dissolved therein were fed dropwise for 30 minutes while being stirred. Their reaction was carried out for 5 hours after the completion of dropwise feeding, and then thus generated ethanol and cyclohexanone were partly evaporated under reduced pressure in a warm bath, whereby 598.2 g of a polysiloxane solution were obtained. The weight average molecular weight of polysiloxane determined by GPC was 1,280.

[0109] Subsequently, into 514.5 g of the polysiloxane solution, 22.60 g of polypropylene glycol (PPG-725 manufactured by Aldrich Co.), which was a pore forming compound, 441.6 g of diethylene glycol dimethyl ether, 16.26 g of 2.38% tetramethylammonium nitrate aqueous solution (pH 3.6), and 5.0 g of 1% diluted maleic acid aqueous solution were added and dissolved while being stir...

example 3

Making of Interlayer Insulating Film

[0112] The compositions for forming a silica-based film obtained by Examples 1 and 2 and Comparative Example 1 were applied onto silicon wafers in a rotational fashion, so as to form coating films. For forming each coating film, the rotating speed was adjusted so as to form a film having a thickness of 0.50±0.05 μm after curing. Subsequently, the organic solvent in the coating films was eliminated over 3 minutes at 250° C., and then the coating films having the organic solvent removed therefrom were finally cured over 30 minutes at 400° C. by using a silica tube furnace in which O2 concentration was controlled so as to become about 100 pm, whereby silica-based films to become interlayer insulating films were made. Thus obtained silica films were irradiated with He—Ne laser light with wavelength of 633 nm. The film thickness determined by an ellipsometer (Ellipsometer L116B manufactured by Gaertner Scientific Corporation) from the phase difference...

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Abstract

The present invention provides a composition for forming a silica-based film, the composition containing (a) a siloxane resin; (b) an organic solvent including at least one species of aprotic solvent; and (c) an onium salt.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a composition for forming a silica-based film, a silica-based film, a method of making the same, and an electronic component provided with the silica-based film. [0003] 2. Related Background Art [0004] SiO2 films, formed by CVD, having a relative permittivity of about 4.2, have conventionally been used as a material for forming an interlayer insulating film. However, from the viewpoint of reducing the capacity between wires in the device so as to improve the operating speed of LSI, materials which can exhibit a lower dielectric constant have been in demand. [0005] For this demand, SiOF films, formed by CVD, having a relative permittivity of about 3.5, have been developed. Further, organic SOG (Spin On Glass), organic polymers, etc. have been developed as insulating materials having a relative permittivity of 2.5 to 3.0. Also, as an insulating material having a relative permittivity o...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C08K5/32
CPCC08K5/5415C08L83/04
Inventor SAKURAI, HARUAKIABE, KOICHI
Owner HITACHI CHEM CO LTD