Phase-change optical recording medium
a phase-change optical recording and phase-change technology, applied in the field of phase-change optical recording medium, can solve the problems of inability to optically reduce the beam size further, information recorded in a certain track would be deteriorated in the process of writing or erasure in the adjacent tracks, and the probability of errors being generated, etc., to achieve suppress the cross-erase effect and high recording density
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
example 1
Single-Layer Disc, Without an Interface Film
[0047]FIG. 1 is the cross-sectional view of the phase-change optical recording medium for Example 1.
[0048] The substrate 101 is formed of a polycarbonate disc having a thickness of 0.6 mm. Grooves each having a depth of 40 nm are formed on the surface of the substrate 101 at a pitch of 0.68 μm. In the case of carrying out land / groove recording, the track pitch is set at 0.34 μm. In the following description, the term “groove track” denotes the track closer to the light incident surface, and the term “land track” denotes the track remoter from the light incident surface.
[0049] The films given below were successively formed on the substrate 101 from the light incident side.
[0050] High refractive index dielectric film 102a:
[0051] ZnS—SiO2, 30 nm;
[0052] Low refractive index dielectric film 103:
[0053] SiOC, 60 nm;
[0054] High refractive index dielectric film 102b:
[0055] ZnS—SiO2, 25 nm;
[0056] Phase-change recording film 104: GeSbTeBi, ...
example 2
Single-Layer Disc, Including Interface Films
[0073]FIG. 2 is the cross-sectional view of the phase-change optical recording medium for Example 2. The films given below were successively formed on the polycarbonate substrate 101 having a thickness of 0.6 mm from the light incident side.
[0074] High refractive index dielectric film 102a:
[0075] ZnS—SiO2, 30 nm;
[0076] Low refractive index dielectric film 103:
[0077] SiOC, 60 nm;
[0078] High refractive index dielectric film 102b:
[0079] ZnS—SiO2, 25 nm;
[0080] Lower interface film 107a: GeN, 5 nm;
[0081] Phase-change recording film 104: GeSbTe, 13 nm;
[0082] Upper interface film 107b: GeN, 5 nm;
[0083] Second dielectric film 105: ZnS—SiO2, 15 nm; and
[0084] Reflection film 106: Ag alloy, 100 nm.
[0085] In this Example, the GeN interface films 107a and 107b were formed on the upper and lower surfaces of the phase-change recording film 104.
[0086] In this Example, the SiOC film used as the low refractive index dielectric film 103 was dep...
example 3
Single-Layer Disc, Including an Interface Film
[0089] The films given below were successively formed on the polycarbonate substrate having a thickness of 0.6 mm from the light incident side.
[0090] High refractive index dielectric film:
[0091] ZnS—SiO2, 30 nm;
[0092] Low refractive index dielectric film:
[0093] SiOC, 60 nm;
[0094] High refractive index dielectric film:
[0095] ZnS—SiO2, 25 nm;
[0096] Phase-change recording film: GeSbTe, 13 nm;
[0097] Interface film: GeN, 5 nm;
[0098] Second dielectric film: ZnS—SiO2, 15 nm; and
[0099] Reflection film: Ag alloy, 100 nm.
[0100] In this Example, the GeN interface film was formed on the upper surface alone of the phase-change recording film.
[0101] In this Example, the SiOC film used as the low refractive index dielectric film was deposited by RF sputtering under the conditions of a total pressure of 1.0 Pa and an oxygen partial pressure of 0.2 Pa. The carbon concentration in the SiOC film was 19.7 atomic %. The phase-change optical reco...
PUM
| Property | Measurement | Unit |
|---|---|---|
| transmittance | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 


