Plasma CVD apparatus and plasma surface treatment method
Patent Information
- Authority / Receiving Office
- US · United States
- Current Assignee / Owner
- KOICHI IND PROMOTION CENT
- Publication Date
- 2007-04-05
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a plasma CVD apparatus and a plasma surface treatment method.
[0003] 2. Description of the Related Art
[0004] As film forming techniques utilizing direct-current plasma, there are a diamond-like carbon film stack and its manufacturing method, which are described in Unexamined Japanese Patent Application KOKAI Publication No. 2003-113470.
[0005] The diamond-like carbon film stack described in the above-indicated publication is used as a field emission electrode, and includes graphite-like carbon lower layers having a high sp2 content and diamond-like carbon upper layers having a high sp3 content, which are sequentially stacked on a substrate in this order. According to this manufacturing method, the film thickness of each layer is set by changing the bias to be applied to a negative electrode (cathode). SUMMARY OF THE INVENTION
[0006] However, according to the manufacturing method of ...