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Method of making organic light emitting devices

a light-emitting device and organic technology, applied in the direction of solid-state devices, semiconductor devices, thermoelectric devices, etc., can solve the problems of difficult to achieve continuous and coalesced film coverage, difficult to manufacture multi-layered devices containing organic materials, and inability to heat light-emitting materials used in oleds, etc., to achieve enhanced structural integrity and enhance structural integrity

Inactive Publication Date: 2007-08-02
GENERAL ELECTRIC CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0006] In one embodiment, the present invention provides a method of making an organic light-emitting device comprising at least one bilayer structure. The method comprises providing at least one first layer comprising at least one cross-linkable organic material and at least one photo acid generator; exposing the first layer to a radiation source to afford a cross-linked first layer; and disposing at least one second layer on the cross-linked first layer. The method affords a bilayer structure having an enhanced structural integrity relative to the corresponding bilayer structure in which the first layer is not cross-linked.

Problems solved by technology

The fabrication of a multilayered device comprising organic materials has been problematic using methods involving solvents.
Further, even if the coating compositions do not dissolve the underlying layer, it is often difficult to achieve continuous and coalesced film coverage.
In many instances, light emissive materials used in OLEDs cannot be heated to temperatures above 130 degrees Celsius as photoluminescence yield of theses materials may be reduced following such treatment.

Method used

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  • Method of making organic light emitting devices
  • Method of making organic light emitting devices
  • Method of making organic light emitting devices

Examples

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example 1

Preparation of an OLED Substructure Comprising an Irradiated Cross-Linked TFB Layer Using the Photoacid Generator-1

[0078] Following the fabrication of a PEDOT coated quartz substrate (See FABRICATION), a solution of TFB and photoacid generator-1 in para-xylene was spin-coated onto the PEDOT coated quartz substrate. The thickness of the TFB film was approximately 300 angstroms and was coated by spin-coating at about 3000 rpm. The solution of TFB and photoacid generator-1 in para-xylene was prepared by heating a mixture of TFB and photoacid generator-1 in para-xylene for 60 minutes at 80 degrees Celsius while stirring. The solution comprised about 1 percent by weight TFB. The photoacid generator-1 was present in an amount corresponding to about approximately 30 weight percent of the weight of the TFB. The solution was allowed to cool down for a period of about 20 minutes prior to spin-coating. Following spin-coating, the bilayer structure comprising the layer containing TFB and photo...

example 2

Preparation of an OLED Substructure Comprising an Irradiated Cross-Linked TFB Layer Using the Photoacid Generator-2

[0079] Following the fabrication of a PEDOT coated quartz substrate; a solution of a blend of TFB and photoacid generator-2 in para-xylene was spin-coated onto the PEDOT coated quartz substrate. The thickness of the resultant TFB film was approximately 300 angstroms and was coated by spin-coating at about 3000 rpm. The solution of TFB and photoacid generator-2 in para-xylene was prepared as in Example 1. Following spin-coating, the bilayer structure comprising the layer containing TFB and photoacid generator-2, and the PEDOT layer was exposed to a UV lamp in the hood for a time period of about 5 minutes. Hereinafter, the resulting OLED substructure is referred to as Sample 6.

[0080] MEASUREMENT OF OPTICAL DENSITY: Samples 1-6 were subjected to multiple rinses in p-xylene as follows. The sample (e.g. Sample 1) was placed on top of the spinner and the surface was flooded...

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Abstract

The invention includes embodiments that relate to a method of making an organic light-emitting device comprising at least one bilayer structure. The method comprises providing at least one first layer comprising at least one cross-linkable organic material and at least one photo acid generator; exposing the first layer to a radiation source to afford a cross-linked first layer; and disposing at least one second layer on the cross-linked first layer. The method affords a bilayer structure having an enhanced structural integrity relative to the corresponding bilayer structure in which the first layer is not cross-linked. The invention also includes embodiments that relate to an organic light emitting device.

Description

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH & DEVELOPMENT [0001] This invention was made with Government support under contract number DEFC2605NT42343 awarded by Department of Energy. The Government has certain rights in the invention.BACKGROUND [0002] The invention includes embodiments that relate to a method of making an organic light-emitting device. The invention also includes embodiments that relate to an organic light-emitting device. [0003] An organic light-emitting device (OLED) is typically a thin film structure formed on a substrate such as glass or transparent plastic. A light-emitting layer (emissive layer) of an organic electroluminiscent material and optional adjacent semiconductor layers are sandwiched between a cathode and an anode to form a multi-layered device. The semiconductor layers may be either hole (positive charge)-injecting or electron (negative charge)-injecting layers and also comprise organic materials. The light emitting organic layer may itself co...

Claims

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Application Information

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IPC IPC(8): H01L29/08
CPCH01L51/0035H01L51/56H01L51/0042H01L51/0038H10K85/111H10K85/114H10K85/146H10K71/40H10K71/12H10K71/00
Inventor PARTHASARATHY, GAUTAMLEWIS, LARRY NEILLITZ, KYLE ERIKSHIANG, JOSEPH JOHN
Owner GENERAL ELECTRIC CO
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