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Resist composition for supercritical development

a composition and composition technology, applied in the direction of photomechanical treatment, instruments, photosensitive materials, etc., can solve the problems of forming patterns to collapse, pattern distortion, step distortion, swelling and pattern distortion, etc., to reduce pattern distortion and high aspect ratio

Inactive Publication Date: 2007-08-23
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0013]The present invention was accomplished in view of the foregoing problems. An object of the present invention is to provide a resist composition for supercritical development process which gives a pattern having high aspect ratio in addition to reducing pattern distortion due to swelling of the pattern and pattern collapse.

Problems solved by technology

However, in the development process using an alkali developer as in Patent Document 1, the penetration of the alkali developer into the pattern obtained may cause swelling of the pattern, which may result in the distortion of the pattern in the step for drying the formed pattern and the like.
The swelling and the distortion of the pattern will be a serious problem, particularly when a fine pattern is required.
In addition, on drying the pattern after the alkali development process, capillary force may act due to the pressure difference between the liquid left in the pattern and external air, which leads the formed pattern to collapse.

Method used

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  • Resist composition for supercritical development
  • Resist composition for supercritical development
  • Resist composition for supercritical development

Examples

Experimental program
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Effect test

example 1

Preparation of Resist Composition for Supercritical Development Process

[0129]A resist composition was obtained by dissolving 100 parts by mass of the resin represented by the following general formula (XI), 8.0 parts by mass of a compound represented by the following general formula (XII) as an acid generator, 1.60 parts by mass of tri-n-octylamine, and 0.64 parts by mass of salicylic acid in propylene glycol monomethyl ether acetate so that the concentration of the solid content was 5.0% by mass.

[0130]On a silicon wafer was coated the negative resist composition obtained as described above, using a spinner. After conducting a prebaking treatment at 100° C. for 90 seconds, the coated resist film having a film thickness of 150 nm was obtained through drying.

(Drawing)

[0131]Next, drawing of the pattern was carried out by irradiating an electron beam directly on the resulting coated resist film using an electron-beam drawing apparatus (manufactured by Hitachi Co., Ltd., trade name: HD-8...

example 2

Preparation of Resist Composition for Supercritical Development Process

[0135]A resist composition was obtained by dissolving 100 parts by mass of the resin represented by the following general formula (XIV), 6.0 parts by mass of a compound represented by the aforementioned general formula (XII) as an acid generator, 0.50 parts by mass of tri-n-octylamine, and 0.20 parts by mass of salicylic acid in propylene glycol monomethyl ether acetate so that the concentration of the solid content was 7.0% by mass.

[0136]On a silicon wafer was coated the resist composition obtained as described above, using a spinner. After conducting a prebaking treatment at 110° C. for 90 seconds, the coated film having a film thickness of 600 nm was obtained through drying.

(Drawing)

[0137]Next, drawing of the resist pattern was carried out by irradiating an electron beam directly on the resulting coated film using an electron-beam drawing apparatus (manufactured by Hitachi Co., Ltd., trade name: HL-800, accele...

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Abstract

In a resist composition for supercritical development process, a development process is carried out by supercritical development process without alkali development process, and includes a base resin which is not removed by said supercritical developer in the presence of acid (A) and an acid generator which generates an acid upon activation by light or electromagnetic waves (B).

Description

[0001]This application is based on and claims the benefit of priority from Japanese Patent Application No. 2006-043459, filed on 21 Feb. 2006, the content of which is incorporated herein by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a resist composition for supercritical development process. More particularly, the present invention relates to a resist composition which gives the resist pattern having favorable line edge roughness (LER) and line width roughness (LWR) and having high verticality in addition to reducing pattern distortion and pattern collapse by using supercritical development process and which is consequently applicable to ultrafine pattern.[0004]2. Related Art[0005]To meet the needs for high integration and miniaturization of semiconductor elements in recent years, use of highly sensitive chemically amplified resist which may achieve high dimensional accuracy and readily provide a high aspect ratio have ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03C1/00
CPCG03F7/0392G03F7/325G03F7/0397
Inventor HIROSAKI, TAKAKOUCHIDA, RYUSUKEMIMURA, TAKEYOSHI
Owner TOKYO OHKA KOGYO CO LTD
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