Method for determining an edge profile of a volume of a photoresist after a development process

a technology of photoresist and volume, applied in the field of method for determining can solve the problems of limited practical application of conventional simulation methods in order to predict the edge profile of a volume of a photoresist after a development process, and the general requirements of high computing time of conventional simulation methods
US20070212624A1Inactive Publication Date: 2007-09-13POLARIS INNOVATIONS
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
POLARIS INNOVATIONS
Publication Date
2007-09-13
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention relates to a method for determining an edge profile of a volume of a photoresist after a development process. At first, the volume of the photoresist is divided into cells. A chemical master equation is set up which reflects the stochastic kinetics of chemical reactions proceeding in cells of the volume of the photoresist during the development process. The chemical master equation is solved for a given development time on the basis of a Gillespie algorithm in order to determine developed and non-developed cells of the volume of the photoresist at the end of the development process. Finally, the edge profile of the volume of the photoresist after the development process is determined on the basis of a cluster of non-developed cells.
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Description

TECHNICAL FIELD OF THE INVENTION

[0001] The present invention relates to a method for simulating the complex kinetics of chemical reactions, and in particular, to a method for determining an edge profile of a volume of a photoresist after a development process. BACKGROUND OF THE INVENTION

[0002] The fabrication of highly integrated electrical circuits with small structural dimensions requires special structuring procedures. One of the most common procedures is the so-called lithographic structuring method. This method comprises depositing a thin layer of a radiation sensitive photoresist on the surface of a semiconductor substrate disk, also referred to as wafer, applying a so-called soft bake step during which the solvent content of the photoresist is reduced and exposing the photoresist to radiation transmitted through a lithographic mask. In the so-called photolithography, electromagnetic radiation is used. During the exposure step, lithographic structures located on the mask are...

Claims

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