Method for determining an edge profile of a volume of a photoresist after a development process

a technology of photoresist and volume, applied in the field of method for determining can solve the problems of limited practical application of conventional simulation methods in order to predict the edge profile of a volume of a photoresist after a development process, and the general requirements of high computing time of conventional simulation methods

Inactive Publication Date: 2007-09-13
POLARIS INNOVATIONS
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Benefits of technology

[0033] In a similar manner this method makes it possible to model the complex kinetics of chemical reactions proceeding in a volume of a photoresist during a development process with a high accuracy, in particular on a molecular level. As a consequence fluctuations whi

Problems solved by technology

However, conventional simulation methods generally require a high computing time.
As a consequence the practical application of such methods in order to predict an edge profile of a volume of a photoresist after a development process is limited.
Moreover the existing methods do not model on a molecula

Method used

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  • Method for determining an edge profile of a volume of a photoresist after a development process
  • Method for determining an edge profile of a volume of a photoresist after a development process

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Embodiment Construction

[0045] The embodiments of the present invention described in the following are suited for determining an edge profile of a volume of a chemically amplified photoresist after a development process. Starting point of an inventive method typically is a volume of a photoresist which was subjected to a post exposure bake preceding the development process. Thereby it is assumed that a fraction of polymer sites of polymers of the photoresist are blocked or protected by dissolution inhibitors. More precisely, this condition is only fulfilled in the case of a positive tone photoresist. As mentioned above, this way of understanding is also applied in the case of a negative tone photoresist, though lacking an exact physical or chemical characterization.

[0046]FIG. 1 shows a typical reaction scheme for a polymer of a photoresist during a development process illustrating a reversible ionization reaction between the polymer and components of a developer solution which is an aqueous base. The poly...

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Abstract

The present invention relates to a method for determining an edge profile of a volume of a photoresist after a development process. At first, the volume of the photoresist is divided into cells. A chemical master equation is set up which reflects the stochastic kinetics of chemical reactions proceeding in cells of the volume of the photoresist during the development process. The chemical master equation is solved for a given development time on the basis of a Gillespie algorithm in order to determine developed and non-developed cells of the volume of the photoresist at the end of the development process. Finally, the edge profile of the volume of the photoresist after the development process is determined on the basis of a cluster of non-developed cells.

Description

TECHNICAL FIELD OF THE INVENTION [0001] The present invention relates to a method for simulating the complex kinetics of chemical reactions, and in particular, to a method for determining an edge profile of a volume of a photoresist after a development process. BACKGROUND OF THE INVENTION [0002] The fabrication of highly integrated electrical circuits with small structural dimensions requires special structuring procedures. One of the most common procedures is the so-called lithographic structuring method. This method comprises depositing a thin layer of a radiation sensitive photoresist on the surface of a semiconductor substrate disk, also referred to as wafer, applying a so-called soft bake step during which the solvent content of the photoresist is reduced and exposing the photoresist to radiation transmitted through a lithographic mask. In the so-called photolithography, electromagnetic radiation is used. During the exposure step, lithographic structures located on the mask are...

Claims

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Application Information

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IPC IPC(8): G03C5/00
CPCG03F7/00
Inventor PHILIPPOU, ALEXANDERMULDERS, THOMAS
Owner POLARIS INNOVATIONS
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