Method of selectively removing conductive material

Abstract

An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with the surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.

Description

FIELD OF THE INVENTION[0001]The invention relates generally to semiconductor processing for forming contacts and other features, and more particularly to methods and systems for selectively removing conductive metal(s) from a substrate.BACKGROUND OF THE INVENTION[0002]In the fabrication of semiconductor devices, contact holes and other features that are formed on a substrate are filled with a conductive material to provide contacts and other circuitry. One method for forming vertical and horizontal interconnects is by a damascene or dual damascene method. FIG. 1 illustrates a portion of a substrate 10 (e.g., wafer or microelectronic substrate) having conductive elements formed according to a prior art damascene method. The substrate 10 includes an insulating layer 12 (e.g., an interdielectric layer or ILD) deposited onto the substrate 10 and pattern etched to form interconnect openings 14. A barrier material layer 16, for example, tantalum (Ta), is deposited within the openings 14 t...

AI Technical Summary

Benefits of technology

[0008]The present compositions and methods facilitate removal of conductive metal(s) selectively relative to dielectric material in an electrolyte process without surface contact by a processing pad or the application of an external...

Problems solved by technology

Current low-k and future ultra low-k dielectrics are brittle and sensitive to the mechanical stresses needed to physically remove refractory metals, such as tantalum (Ta).

Most barrier materials are difficult to remove by CMP because the barrier materials resist removal by abrasion and dissolution.

Typical barrier removal slurries require a high abrasive concentration, which tend to result in dishing and scratching of the copper interconnect 20 within the openings 14 and detrimental erosion to the exposed insulating layer 12, including peeling and delaminating of low k dielect...

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