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Cleaning wafer including detergent layer for exposure apparatus of immersion lithography system, composition of detergent layer, method of using cleaning wafer and application system

a technology of immersion lithography and cleaning wafer, which is applied in the direction of cleaning using liquids, photomechanical equipment, instruments, etc., can solve the problems of difficult to fabricate calcium fluoride lenses, inability to project a clear image onto the wafer, and the new-generation 157 nm lithograph process. achieve the effect of effectively cleaning the objective lens, low cost and preservation of tim

Inactive Publication Date: 2008-07-10
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides an apparatus and method for effectively cleaning the objective lens of a semiconductor apparatus without the need for the vendor's assistance. The cleaning apparatus is easy to operate, cost-effective, and does not require additional space. The cleaning method involves using a cleaning wafer with a detergent layer that contains a cleaning component, which is dissolved in a solvent to react with contaminants on the objective lens. The cleaning wafer can be easily fabricated and used in a semiconductor process for cleaning the objective lens. The invention also provides a composition for forming the cleaning wafer and a method for fabricating it. Overall, the invention provides a simple and effective solution for cleaning semiconductor apparatuses without the need for additional tools or resources.

Problems solved by technology

However, the new-generation 157 nm lithograph process confronts with numerous problems, such as the application of brand new laser source, photomask, objective lenses that can reduce the image and exposure light positions, and photoresist reagent, etc.
Below 157 nm, it is difficult to fabricate lenses of calcium fluoride for the lenses either have too many defects or significant aberrations are resulted.
Ultimately, it is unable to project a clear image onto the wafer.
Further, during the exposure process, the dissolved substance in the photoresist is evaporated and outgassing is resulted, which ultimately may deposit on and contaminate the objective lens.
Not only the cleaning of the objective lens is time consuming and costly, the objective lens is often not completely cleaned, which then requires a re-cleaning of the objective lens.

Method used

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  • Cleaning wafer including detergent layer for exposure apparatus of immersion lithography system, composition of detergent layer, method of using cleaning wafer and application system
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  • Cleaning wafer including detergent layer for exposure apparatus of immersion lithography system, composition of detergent layer, method of using cleaning wafer and application system

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Embodiment Construction

[0033]The present invention has been disclosed above in the preferred embodiments, but is not limited to those. It is known to persons skilled in the art that some modifications and innovations may be made without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention should be defined by the following claims.

[0034]The present invention is to provide a cleaning wafer containing a detergent layer for cleaning a semiconductor apparatus in-situ, for example, an objective lens of an immersion exposure apparatus. During the cleaning process, the cleaning wafer is placed on a wafer-scanning stage, and a portion of the cleaning component in the cleaning wafer is dissolved by a solvent for the cleaning component to react with the contaminants on the objective lens. The objective lens is completely cleaned after being rinsed with another solvent.

[0035]Referring to FIG. 1, a cleaning wafer 10 includes a wafer 12 and a detergent layer 14. Th...

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Abstract

A method of an in situ cleaning of an objective lens of a semiconductor apparatus includes placing a cleaning wafer having a detergent layer on a scanning stage of the semiconductor apparatus. A cleaning composition in the detergent layer is dissolved by using an immersion liquid (water), so that the cleaning composition reacts with the contaminants on the objective lens. Thereafter, the objective lens is rinsed with another solvent.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of Invention[0002]The present invention relates to a method and an apparatus for cleaning a semiconductor system. More particularly, the present invention is related to a cleaning wafer applicable to an exposure apparatus of an immersion lithography system and an objective lens of the exposure apparatus, an in situ cleaning method using the cleaning wafer, and a composition of a coating layer of the cleaning wafer.[0003]2. Description of Related Art[0004]In the semiconductor industry, methods used in scaling down the linewidth typically include reducing the wavelength of an exposure light to enhance resolution. However, the new-generation 157 nm lithograph process confronts with numerous problems, such as the application of brand new laser source, photomask, objective lenses that can reduce the image and exposure light positions, and photoresist reagent, etc. Below 157 nm, it is difficult to fabricate lenses of calcium fluoride for the lense...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B08B3/08C11D7/00B08B7/00
CPCB08B3/08C11D11/0047C11D17/049H01L21/6704G03F7/70925G03F7/70933G03F7/70983G03F7/70341C11D2111/22
Inventor HUANG, I-HSIUNGLIN, LING-CHIEH
Owner UNITED MICROELECTRONICS CORP