ELECTRODE HAVING A CoS LAYER THEREON, PROCESS OF PREPARATION, AND USES THEREOF

a cos layer and electrode technology, applied in the field of electrochemicals, can solve the problems of limiting cell performance, device performance, and low conductivity of solid polymer electrolyte, and achieve the effect of easy control of thickness

Inactive Publication Date: 2010-03-18
MARSAN BENOIT +1
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The resulting electrodes exhibit improved electrocatalytic properties, increased transparency, and controllable CoS layer thickness, leading to enhanced performance in photovoltaic cells by facilitating better charge transfer and reduced series resistance.

Problems solved by technology

However, these authors showed that the high series resistance of the cells, mainly attributed to the very low ionic conductivity of the polymer electrolytes, control the device performance.
Despite this improvement, the conductivity of the solid polymer electrolyte is still too low, particularly at room temperature, and continues to limit the cell performance.
operties. However, when this electrolyte replaced the solid ionic membrane PEO12—CsT / 0.1 T2 in an EPC, the cell conversion efficiency was not
However, the former is mechanically instable in the electrolyte.
However, this document does not teach nor suggest how to deposit cobalt sulphide on a non-conducting substrate.
However, this document does not teach nor suggest how to deposit cobalt sulphide on a non-conducting substrate.
However, this document does not teach or suggest how to deposit cobalt sulphide on a non-conducting substrate.
The latter method consists in immersing the substrate for a few minutes in CoCl2 solution (≧0.1 M), rinsing in water and then immersing in a separate polysulfide solution for a few minutes; this process can be repeated several times. However, this technique does not allow an adequate control of the CoS film thickness.
However, when the above method is used to form a cobalt sulfide layer on a transparent conducting glass electrode (ITO), metallic cobalt is plated on the substrate (instead of Co(OH)2) during the first step, that cannot be converted to CoS by a subsequent immersion in the polysulfide solution.
Thus, it seems to be very difficult to fabricate, on ITO, CoS thin films of easily controllable thicknesses (and therefore transparencies).

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • ELECTRODE HAVING A CoS LAYER THEREON, PROCESS OF PREPARATION, AND USES THEREOF
  • ELECTRODE HAVING A CoS LAYER THEREON, PROCESS OF PREPARATION, AND USES THEREOF
  • ELECTRODE HAVING A CoS LAYER THEREON, PROCESS OF PREPARATION, AND USES THEREOF

Examples

Experimental program
Comparison scheme
Effect test

examples

[0147]Indium tin oxide on glass electrodes and indium tin oxide on polymer electrodes having thereon a layer of Co(OH)2 and a layer of CoS have been prepared according to the following method.

[0148]1) Electrodeposition

[0149]Prior to electrodeposit a layer of Co(OH)2 on ITO on glass obtained from LIBBEY OWENS FORD (trade-mark), the latter is cleaned with soap and water, rinsed with water and dried by means of acetone. Then, the electrode is sonicated in dichloromethane for a period of 5 minutes prior to be air dried. Finally, the electrode is connected to a copper clip prior to the electrodeposition.

[0150]The electrodeposition is carried out in a cell having three electrodes (by means of a potentiostat) by applying a constant current (galvanostatic mode). The cell contains 25 mL of a solution comprising 20 g / L of CoSO4 and 1 to 2 M of NaCl. The solution also comprises 100 μL of a NH4Cl / NH4OH buffer in order to maintain the pH in a range of about 6.8 to about 7.5. The buffer contains ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
energy conversion efficiencyaaaaaaaaaa
ionic conductivityaaaaaaaaaa
energy conversion efficiencyaaaaaaaaaa
Login to View More

Abstract

The present invention relates to an electrode comprising a non-conductive substrate, a first layer and a second layer. The first layer is disposed on the substrate and comprises indium tin oxide or fluorine-doped SnO2. The second layer is disposed on the first layer and comprises CoS. A process for preparing this electrode is also disclosed. Such an electrode is particularly useful in a photovoltaic cell.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]The present application claims priority on U.S. provisional application No. 60 / 513,211 filed on Oct. 23, 2003, and on U.S. provisional application No. 60 / 570,074 filed on May 12, 2004. The above-mentioned applications are incorporated herein by reference in their entirety.TECHNICAL FIELD[0002]The present invention relates to improvements in the field of electrochemistry. In particular, this invention relates to a CoS coated electrode and a process for preparing the same.BACKGROUND OF THE INVENTION[0003]Electrochemical photovoltaic cells (EPC's) are based on a junction between a semiconductor (p-type or n-type) and an electrolyte containing one redox couple; an auxiliary electrode completes the device. If, the semiconductor and electrolyte Fermi levels are different and well suited, a built-in potential will develop at their interface and the device will exhibit diode rectification in the dark. When electrons and holes are photogenerated in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L31/042B32B1/00C25B3/23C25B3/25C25D9/08H01G9/20H01M4/04H01M4/36H01M4/48H01M4/52H01M4/58H01M14/00
CPCC25D9/08H01G9/2054H01M4/0452H01M4/366H01M4/48Y10T428/265H01M4/5815H01M14/00H01M14/005Y02E10/542H01M4/52Y02E60/10
InventorMARSAN, BENOITBOURGUIGNON, BERNARD
OwnerMARSAN BENOIT