Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Deposition processes and photovoltaic devices with polymeric precursors

Inactive Publication Date: 2012-03-22
PRECURSOR ENERGETICS
View PDF8 Cites 48 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0084]In certain aspects, polymeric precursor compounds can be used to form nanoparticles that can be used in various methods to prepare semiconductor materials. Embodiments of this invention may further provide processes using nanoparticles made from polymeric precursors to enhance the formation and properties of a semiconductor material.

Problems solved by technology

The difficulties with these approaches include lack of uniformity, purity and homogeneity of the CIGS layers, leading ultimately to limited light conversion efficiency.
Other disadvantages in the production of thin film devices are limited ability to control product properties through process parameters and low yields for commercial processes.
Absorber layers suffer from the appearance of different solid phases, as well as imperfections in crystalline particles and the quantity of voids, cracks, and other defects in the layers.
In general, CIGS materials are complex, having many possible solid phases.
Moreover, methods for large scale manufacturing of CIGS and related thin film solar cells can be difficult because of the chemical processes involved.
In general, large scale processes for solar cells are unpredictable because of the difficulty in controlling numerous chemical and physical parameters involved in forming an absorber layer of suitable quality on a substrate, as well as forming the other components of an efficient solar cell assembly, both reproducibly and in high yield.
In another example, introducing alkali ions at a controlled concentration into various layers and compositions of a CIGS-based solar cell has not been achieved in a general way.
Conventional methods for introducing sodium do not readily provide homogenous concentration levels or control over sodium location in a CIGS film.
A significant problem is the inability in general to precisely control the stoichiometric ratios of metal atoms and Group 13 atoms in the layers.
Without direct control over those stoichiometric ratios, processes to make semiconductor and optoelectronic materials can be less efficient and less successful in achieving desired compositions and properties.
For example, no single source compound is currently known that can be used to prepare a layer or film of any arbitrary stoichiometry from which CIGS materials can be made.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deposition processes and photovoltaic devices with polymeric precursors
  • Deposition processes and photovoltaic devices with polymeric precursors
  • Deposition processes and photovoltaic devices with polymeric precursors

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0613]A solar cell was made by the following process.

[0614]A first ink was prepared by dissolving the Cu-enriched CIGS polymeric precursor compound {Cu1.1In0.7Ga0.3(SetBu)1.1(SenBu)3.0} with 0.5 at % Na supplied via NaIn(SenBu)4 in heptane, 50% polymeric precursor content, by weight, followed by dilution with cyclohexane to about 25% polymeric precursor content, by weight, in an inert atmosphere glove box. The resulting ink was filtered through a 0.2 μm PTFE syringe filter prior to use.

[0615]A second ink was made prepared by dissolving the Cu-deficient CIGS polymeric precursor compound {Cu0.85In0.7Ga0.3(SetBu)0.85(SenBu)3.0} with 0.5 at % Na supplied via NaIn(SenBu)4 in heptane, 25% polymeric precursor content, by weight, in an inert atmosphere glove box. The resulting ink was filtered through a 0.2 μm PTFE syringe filter prior to use.

[0616]An 0.04 mL aliquot of the first ink was deposited onto a piece of 2 inch by 2 inch square Mo-coated sodalime glass substrate using a knife coate...

example 2

[0624]A solar cell was made by the following process.

[0625]A first ink was prepared by dissolving the Cu-enriched CIGS polymeric precursor compound {Cu1.1In0.7Ga0.3(SetBu)1.1(SenBu]3.0} with 0.5 at % Na supplied via NaIn(SenBu)4 in heptane, 50% polymer content, by weight, followed by dilution with cyclohexane to about 25% polymer content, by weight, in an inert atmosphere glove box. The resulting ink was filtered through a 0.2 μm PTFE syringe filter prior to use.

[0626]A second ink was made prepared by dissolving the Cu-deficient CIGS polymeric precursor compound {Cu0.85In0.7Ga0.3(SetBu)0.85(SenBu)3.0} with 0.5 at % Na supplied via NaIn(SenBu)4 in heptane, 25% polymer content, by weight, in an inert atmosphere glove box. The resulting ink was filtered through a 0.2 μm PTFE syringe filter prior to use.

[0627]An 0.04 mL aliquot of the first ink was deposited onto a piece of 2 inch by 2 inch square Mo-coated sodalime glass substrate using a knife coater (Global Instrument) in an inert ni...

example 3

[0630]A solar cell was made by the following process.

[0631]A first ink was prepared by dissolving {Cu1.1In0.7Ga0.3(SetBu)1.1(SenBu]3.0} with 0.5 at % Na supplied via NaIn(SenBu)4 in heptane, 25% polymer content, by weight, in an inert atmosphere glove box. The resulting ink was filtered through a 0.2 μm PTFE syringe filter prior to use.

[0632]A second ink was made prepared by dissolving {Cu0.85In0.7Ga0.3(SetBu)0.85(SenBu)3.0} with 0.5 at % Na supplied via NaIn(SenBu)4 in heptane, 25% polymer content, by weight, in an inert atmosphere glove box. The resulting ink was filtered through a 0.2 μm PTFE syringe filter prior to use.

[0633]An 0.04 mL aliquot of the first ink was deposited onto a piece of 2 inch by 2 inch square Mo-coated sodalime glass substrate using a knife coater (RK Instruments) in an inert nitrogen atmosphere glove box with a knife speed of 20 mm / s The wet polymer film on the substrate was transferred to a pre-heated 300° C. hot plate for 5 minutes to dry and convert the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a solar cell for targeting a particular concentration and providing a gradient of metal atom concentration. A selenium layer can be used in annealing a thin film photovoltaic absorber material.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of U.S. Provisional Application No. 61 / 498,383, filed Jun. 17, 2011, U.S. Provisional Application No. 61 / 439,735, filed Feb. 4, 2011, and U.S. Provisional Application No. 61 / 383,292, filed Sep. 15, 2010, each of which is hereby incorporated by reference in its entirety.BACKGROUND[0002]One way to produce a solar cell product involves depositing a thin, light-absorbing, solid layer of the material copper indium gallium diselenide, known as “CIGS,” on a substrate. A solar cell having a thin film CIGS layer can provide low to moderate efficiency for conversion of sunlight to electricity.[0003]Making a CIGS semiconductor generally requires using several source compounds and / or elements which contain the atoms needed for CIGS. The source compounds and / or elements must be formed or deposited in a thin, uniform layer on a substrate. For example, deposition of the CIGS sources can be done as a co-deposition, or ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/02H01L31/18
CPCH01L31/022425H01L31/046H01L31/03923H01L21/0237H01L21/02485H01L21/02491H01L21/0251H01L21/02568H01L21/02576H01L21/02579H01L21/02581H01L21/02601H01L21/02628Y02E10/52Y02E10/541H01L31/0322Y02P70/50H01L31/042H01L31/18
Inventor FUJDALA, KYLE L.ZHU, ZHONGLIANGPADOWITZ, DAVIDMARKOFF JOHNSON, PAUL R.CHOMITZ, WAYNE A.
Owner PRECURSOR ENERGETICS
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More