High Speed Photosensitive Devices and Associated Methods

Abstract

High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A / W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

Description

PRIORITY DATA[0001]This application claims the benefit of U.S. Provisional Patent Application Ser. No. 61 / 356,536, filed on Jun. 18, 2010, which is incorporated herein by reference.BACKGROUND[0002]Many imaging applications such as hands-free gesture control, video games, medical, and machine vision, as well as communication applications utilize various optoelectronic devices, such as photodetectors and imaging arrays of photodetectors. Communication applications typically use, for example, fiber optical networks because such networks perform well in the near infrared wavelengths of light where optical fibers experience lower signal loss. Applications for laser marking and range finding commonly use lasers with near infrared wavelengths such 1064 nm. Other applications such as depth perception applications utilize imagers that can detect near infrared wavelengths such as 850 nm or 940 nm. These wavelengths are commonly generated from light emitting diodes or laser diodes made with ga...

AI Technical Summary

Benefits of technology

[0007]In yet another aspect, a method of increasing the speed of an optoelectronic device can include doping at least two regions in a silicon material to form at least one junction, and texturing the silicon material to form a textured region positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A / W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm. In one aspect, the device can include a further doped region intended to quickly bring carriers from the side opposite junction to the junction region.

Problems solved by technology

Therefore, the silicon devices utilized for these applications are often thin and have specific design considerations included to reduce response time.

Thick silicon devices with high response at longer wavelengths, on the other hand, have slow response time and are difficult to deplete.

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