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Copper oxide etchant and etching method using the same

a technology of copper oxide and etching method, which is applied in the field of copper oxide etching method, can solve the problems of large size and high cost of source unit, not suitable in terms of reducing manufacturing cost, and a considerable limitation in cost or large siz

Inactive Publication Date: 2013-01-31
ASAHI KASEI E-MATERIALS CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a copper oxide etchant and a method for using it to selectively remove copper oxide from exposed and non-exposed parts during laser light exposure. The technical effect is the ability to selectively etch materials using copper oxide as a thermal-reactive resist material.

Problems solved by technology

However, such a light source unit is large-sized and expensive, and thus, it is not suitable in terms of reduction of the manufacturing cost.
This gives a considerable limitation in terms of the cost or the large size.
In addition, tungsten (W) or molibdenum (Mo) problematically has a low resistance to a dry etching using a fluorine-based gas.
Therefore, this technique takes only a sea-island structure in which a resist portion remaining after the etching is at random, and it is difficult to control a pattern size in a uniform convex-concavo or line-shaped fine pattern and the like.
However, although there are a number of etchants for copper as disclosed in Patent Literatures 5 to 8, there has not been reported for the selective etching of exposure / non-exposure portions with high precision when exposure is performed using noble metal oxide, particularly, copper oxide.

Method used

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  • Copper oxide etchant and etching method using the same
  • Copper oxide etchant and etching method using the same
  • Copper oxide etchant and etching method using the same

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0080]A film of copper oxide was formed on a glass flat substrate of 50 mmφ using a sputtering method under the following condition.

[0081]target: copper oxide (II) (3 inchesφ)

[0082]power (W): RF100

[0083]gas type: mixed gas of argon and oxygen (ratio 95:5)

[0084]pressure (Pa): 0.5

[0085]film thickness (nm): 20

[0086]This copper oxide film was exposed under the following condition.

[0087]exposure semiconductor laser wavelength: 405 nm

[0088]lens numerical aperture: 0.85

[0089]exposure laser power: 1 mW to 10 mW

[0090]feeding pitch: 260 nm

[0091]Although it is possible to manufacture various shapes or patterns by modulating the laser light intensity during exposure, a successive trench shape was used as a pattern in the experiment in order to facilitate evaluation of an interface after the etching. The formed shape may be an isolated circular shape, an elliptical shape, or the like depending on the target use, and the exposure shape is not intended to limit the disclosure.

[0092]As an index for...

example 2

[0097]The copper oxide film formed and exposed under the same condition as that of Example 1 was etched using the copper oxide etchant prepared under the following condition. The pH value of the etchant was 6.4. The concentration of the chelating agent in the etchant was 3mass %.

[0098]alanine: 0.9 g

[0099]water: 30 g

[0100]The etching was performed by immersing the copper oxide in the copper oxide etchant for 30 minutes at a temperature of 23° C. Then, the AFM image of the etched copper oxide film was measured (FIG. 6). As a result, the periodic trench shape having a trench depth of 20.0 nm was observed. For a pitch of 260 nm, the trench width was 80 nm.

example 3

[0101]The copper oxide film formed and exposed under the same condition as that of Example 1 was etched using the copper oxide etchant prepared under the following condition. The pH value of the etchant was 3.7. The concentration of the chelating agent in the etchant was 3 mass %.

[0102]ornithine hydrochloride: 0.9 g

[0103]water: 30 g

[0104]The etching was performed by immersing the copper oxide in the copper oxide etchant for 30 minutes at a temperature of 23° C. Then, the AFM image of the etched copper oxide film was measured (FIG. 7). As a result, the periodic trench shape having a trench depth of 20.0 nm was observed. For a pitch of 260 nm, the trench width was 85 nm.

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Abstract

In order to provide a copper oxide etchant and an etching method using the same capable of selectively etching exposure / non-exposure portions when laser light exposure is performed by using copper oxide as a thermal-reactive resist material, the copper oxide etchant for selectively etching copper oxides having different oxidation numbers in a copper oxide-containing layer containing the copper oxide as a main component contains at least a chelating agent or salts thereof.

Description

TECHNICAL FIELD[0001]This disclosure relates to a copper oxide etchant and an etching method used in an etching process in a micropatterning technology in which copper oxide is used as a thermal-reactive resist material.BACKGROUND[0002]In recent years, as demands for a high density and a high integration increase in the fields of semiconductors, optical / magnetic recordings, and the like, a micropatterning technology capable of patterning a size of several tens to several hundreds nanometers or smaller becomes indispensable. In this regard, a lot of researches have been made for elemental techniques in each process such as masks / steppers, exposure, and resist materials in order to implement such a micropatterning.[0003]Although many studies have been made for resist materials, the resist material most widely used at this time is a photo-reactive organic resist (hereinafter, also referred to as a “photoresist”) that reacts to an exposure light source such as infrared light, an electro...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C09K13/00B44C1/22
CPCH01L21/0337C09K13/00B82Y40/00H01L21/32134C09K13/06G03F7/0041G03F7/322
Inventor NAKAGAWA, NORIKIYONAKATA, TAKUTOMITAMURA, YOSHIMICHI
Owner ASAHI KASEI E-MATERIALS CORPORATION