METAL SILICIDE SELF-ALIGNED SiGe HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF FORMING THE SAME

Abstract

The present invention discloses a metal silicide self-aligned SiGe heterojunction bipolar transistor, which is designed to overcome the shortcomings such as the large base resistance R_B of the prior art products. The metal silicide self-aligned SiGe heterojunction bipolar transistor of the present invention mainly comprises an Si collector region, a local dielectric region, a base region, a base-region low-resistance metal silicide layer, a polysilicon emitter region, an emitter-base spacer dielectric region composed of a liner silicon oxide layer and a silicon nitride inner sidewall, a monocrystalline emitter region, a contact hole dielectric layer, an emitter metal electrode and a base metal electrode. The base-region low-resistance metal silicide layer extends all the way to the outside of the emitter-base spacer dielectric region. The present invention discloses a method of forming a metal silicide self-aligned SiGe heterojunction bipolar transistor, which is used to form the aforesaid bipolar transistor. The metal silicide self-aligned SiGe heterojunction bipolar transistor and the method of forming the same of the present invention can reduce the base resistance R_B, and feature a simple process and a low cost.

Description

BACKGROUND OF THE INVENTION[0001]1. Technical Field[0002]The present invention relates to a metal silicide self-aligned SiGe heterojunction bipolar transistor and a method of forming the same.[0003]2. Description of Related Art[0004]Planar silicon (Si) bipolar transistors are conventional devices for constructing analog integrated circuits (ICs). However, because silicon materials are inherently disadvantageous in speed, group III-V compound (e.g., gallium arsenide) semiconductor devices have always dominated in the field of high-frequency and high-speed applications in the history. For SiGe heterojunction bipolar transistors obtained by introducing narrow-bandgap SiGe alloys into silicon bipolar transistors as materials of base regions, not only the high-frequency performance is improved significantly but also the advantage of the low cost of the silicon-based technology is maintained. Therefore, the SiGe heterojunction bipolar transistors have been widely used in the field of radi...

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Benefits of technology

[0010]To overcome the aforesaid shortcomings, the present invention provides a metal silicide self-aligned

Problems solved by technology

However, because silicon materials are inherently disadvantageous in speed, group III-V compound (e.g., gallium arsenide) semiconductor devices have always dominated in the field of high-frequency and high-speed applications in the history.

The former technical solution requires use of expensive special planarization apparatuses and processes; and the latter technical solution may cause proces

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