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Metal interconnection structure

a metal interconnection and structure technology, applied in the direction of semiconductor/solid-state device details, semiconductor devices, electrical devices, etc., can solve the problems of unfavorable semiconductor devices, too thick protective layer b>16/b>, etc., and achieve the effect of reducing the resistance of the later formed metal interconnection structur

Active Publication Date: 2014-05-22
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent is about a way to improve the protective layer of a metal interconnection structure. By introducing a reactive gas like ozone on the surface of the layer, oxygen can be diffused into it, which lowers the dielectric constant and reduces resistance. This makes it easier to create a efficient metal interconnection structure.

Problems solved by technology

However, the too thick protective layer 16 is unfavorable for the semiconductor devices with the trend of miniaturization.
Accordingly, how to improve the composition of the protective layer in order to form the protective layer having a predetermined thickness and a predetermined dielectric constant is an important issue in this field.

Method used

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Embodiment Construction

[0014]To provide a better understanding of the present invention, preferred exemplary embodiments will be described in detail. The preferred exemplary embodiments of the present invention are illustrated in the accompanying drawings with numbered elements.

[0015]The present invention can be integrated into damascene structure processes for a protective layer having a single-layered structure, especially as the protective layer initially does not contain oxygen (O). For example, the protective layer could be made of silicon carbide (SiC) or silicon carbonitride (SiCN). The damascene structure processes may include dual damascene structure processes such as trench-first process, via-first process or partial via-first process.

[0016]Please refer to FIG. 2 through FIG. 10, which illustrate a method of fabricating a metal interconnection structure according to a preferred exemplary embodiment of the present invention. The dual damascene structure process is given as an example in this exem...

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Abstract

A metal interconnection structure includes a substrate and a protective laver. The substrate includes at least a first conductive layer. The protective layer is a single-layered structure disposed on the substrate, and a quantity of oxygen (O) in an upper part of the protective layer is more than a quantity of oxygen (O) in a lower part of the protective layer. A material of the upper part of the protective layer includes silicon oxycarbide (SiCO) or silicon oxycarbonitride (SiCNO), and a material of the lower part of the protective layer includes silicon carbide (SiC) or silicon carbonitride (SiCN).

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a metal interconnection structure and a method of fabricating a metal interconnection structure, and more particularly, to a metal interconnection structure including a protective layer partially containing oxygen (O) and a method of fabricating the same.[0003]2. Description of the Prior Art[0004]When fabricating semiconductor integrated circuits (ICs), semiconductor devices are connected by several metallic interconnecting layers commonly referred to as multi-level interconnects. A damascene process is a convenient and predominant method for forming the multi-level interconnects. The damascene process includes etching a dielectric material layer to form a trench and / or via patterns, filling the patterns with conductive materials, such as copper, and performing a planarization process. This way, a metal interconnection structure is obtained.[0005]Please refer to FIG. 1, which illustrates...

Claims

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Application Information

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IPC IPC(8): H01L23/52H01L21/768
CPCH01L23/53238H01L23/53266H01L23/53295H01L2924/0002H01L21/76811H01L21/76813H01L21/76826H01L21/76829H01L2924/00H01L23/52H01L21/768
Inventor LIN, YUH-MINCHEN, WEN-TINGWU, YI-YU
Owner UNITED MICROELECTRONICS CORP