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Hardmask composition and method of forming pattern using the hardmask composition

a composition and composition technology, applied in the field of hardmask composition and a method of forming patterns using the hardmask composition, can solve the problems of increasing the height of the photoresist layer, the difficulty of providing a fine pattern having a desirable profile, and the limited hardmask pattern, so as to achieve the effect of improving the etching resistan

Inactive Publication Date: 2016-01-07
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

Example embodiments describe a hardmask that is more resistant to etching.

Problems solved by technology

According to minimizing of the pattern to be formed, it may be difficult to provide a fine pattern having a desirable profile by only the typical lithographic technique described above.
However, increasing the heights of a photoresist layer and a hardmask pattern is limited.
In addition, the hardmask pattern may be damaged during the etching process for obtaining a material layer with a narrow line-width, and thus electrical characteristics of devices may deteriorate.

Method used

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  • Hardmask composition and method of forming pattern using the hardmask composition
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  • Hardmask composition and method of forming pattern using the hardmask composition

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1a

Preparation of Hexagonal Boron Nitride to which Nitro Group (NO2) and —HSO3 Functional Group are Bonded

[0246]A hexagonal boron nitride (h-BN), to which a nitro group (NO2) and —HSO3 functional group were bonded, was obtained in the same manner as in Preparation Example 1, except that 10 ml of a mixture of a nitric acid and a sulfuric acid at a weight ratio of 1:3 was used instead of 10 ml of the 30 wt % H2O2 solution.

preparation example 1b

Preparation of Hexagonal Boron Nitride to which —HSO3 Functional Group is Bonded

[0247]A hexagonal boron nitride (h-BN), to which —HSO3 functional group was bonded, was obtained in the same manner as in Preparation Example 1, except that 10 ml of oleum was used instead of 10 ml of the 30 wt % H2O2 solution.

preparation example 2

Preparation of Hexagonal Boron Nitride to which —NH2 Functional Group is Bonded

[0248]100 mg of h-BN and 10 ml of a hydrazine (N2H4) solution was placed in an autoclave, and a temperature was increased to 100° C., and the mixture was allowed to react for about 12 hours or more. When the reaction was completed, the resultant was filtered, and thus a hexagonal boron nitride (h-BN), to which —NH2 was bonded, was obtained from the N2H4 solution.

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Abstract

A hardmask composition includes a first material including one of an aromatic ring-containing monomer and a polymer containing a repeating unit including an aromatic ring-containing monomer, a second material including at least one of a hexagonal boron nitride and a precursor thereof, a chalcogenide-based material and a precursor thereof, and a two-dimensional carbon nanostructure and a precursor thereof, the two-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen, and a solvent.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]This application claims the benefit of Korean Patent Application No. 10-2014-0083905, filed on Jul. 4, 2014, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.BACKGROUND[0002]1. Field[0003]Example embodiments relate to a hardmask composition and a method of forming a pattern using the hardmask composition.[0004]2. Description of the Related Art[0005]The semiconductor industry has developed an ultra-fine technique for providing a pattern of several to several tens of nanometer size. Such an ultrafine technique benefits from effective lithographic techniques. A typical lithographic technique includes providing a material layer on a semiconductor substrate, coating a photoresist layer on the material layer, exposing and developing the same to provide a photoresist pattern, and etching the material layer using the photoresist pattern as a mask.[0006]According to minimizing o...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/47C08K3/30C08K3/38H01L21/4757
CPCH01L21/47H01L21/47573C08K2003/3009C08K3/30C08K2003/385C08K3/38C08G83/001G03F7/094H01L21/0271G03F7/11G03F7/40
Inventor SHIN, HYEONJINKIM, SANGWONPARK, SEONGJUN
Owner SAMSUNG ELECTRONICS CO LTD
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