Indium electroplating compositions containing 2-imidazolidinethione compounds and methods for electroplating indium
a technology of indium electroplating composition and compound, which is applied in the direction of basic electric elements, semiconductor devices, etc., can solve the problems of increasing surface roughness, difficult reproducibility of plate void-free uniform indium of target thickness and smooth surface morphology on metal layers, and corrosion of indium in galvanic interactions. , to achieve the effect of reducing damage on assembled chips
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example 2
[0058]The method described in Example 1 above was repeated except that the indium electroplating composition included the following components:
TABLE 2COMPONENTAMOUNTIndium sulfate 45 g / LCitric acid 96 g / LSodium citrate dihydrate 59 g / L1-(2-hydroxyethyl)-2-imidazolidinethione0.25 g / L
[0059]The nickel plated silicon waters were immersed in the indium electroplating composition and indium metal was electroplated on the nickel. Indium electroplating was done at 25° C. at a current density of 4ASD for 30 seconds. The pH of the composition was 2.4. The anode was an indium soluble electrode. After indium was electroplated on the nickel layers, the photoresist was stripped from the wafers and the indium morphology was observed. All of the indium deposits appeared uniform and smooth.
[0060]FIG. 2 is an optical microscope image of one of the indium metal deposits electroplated on the nickel layer. The indium deposit appeared smooth in contrast to the indium deposit of FIG. 1B.
example 3
[0061]The method described in Example 1 above was repeated except that the silicon wafers were patterned with photoresist to have rectangular vias having lengths of 50 m and the indium electroplating composition included the following components:
TABLE 3COMPONENTAMOUNTIndium sulfate 45 g / LCitric acid 96 g / LSodium citrate dihydrate 59 g / L1-(2-hydroxyethyl)-2-imidazolidinethione1.25 g / L
[0062]The nickel plated silicon wafers were immersed in the indium electroplating composition and indium metal was electroplated on the nickel. Indium electroplating was done at 25° C. at a current density of 4ASD for 30 seconds. The pH of the composition was 2.4. After indium was electroplated on the nickel, the photoresist was stripped from the wafers and the indium morphology was observed. All of the indium deposits appeared uniform and smooth.
[0063]FIG. 3 is an optical microscope image of one of the indium metal deposits electroplated on the nickel layer. The indium deposit appeared smooth in cont...
example 4
[0064]The method described in Example 2 above was repeated, except the indium electroplating composition included the following components:
TABLE 4COMPONENTAMOUNTIndium sulfate 45 g / LCitric acid 96 g / LSodium citrate dihydrate 59 g / L1-(2-hydroxyethyl)-2-imidazolidinethione0.01 g / L
[0065]The nickel plated silicon wafers were immersed in the indium electroplating composition and indium metal was electroplated on the nickel. Indium electroplating was done at 25° C. at a current density of 4ASD for 30 seconds. The pH of the composition was 2.4. The anode was an indium soluble electrode. After indium was electroplated on the nickel layers, the photoresist was stripped from the wafers and the indium morphology was observed. All of the indium deposits appeared uniform and smooth.
[0066]FIG. 4 is an optical microscope image of one of the indium metal deposits electroplated on the nickel layer. The indium deposit appeared smooth in contrast to the indium deposit of FIG. 1B.
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