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Photoacid-generating compound, polymer derived therefrom, photoresist composition including the photoacid-generating compound or polymer, and method of forming a photoresist relief image

Active Publication Date: 2018-03-01
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes a photoacid-generating compound that can be used to create polymers and photoresist compositions. The compound has a specific structure and can generate a photoacid when exposed to light. The polymers and photoresist compositions made from this compound have improved properties, such as better resolution and better adhesion. The patent also describes a method for creating a photoresist relief image using the described polymer and photoresist composition. Overall, this patent provides a technical solution for improving the performance of polymers and photoresist compositions in the field of semiconductor device manufacturing.

Problems solved by technology

However, the use of bulky substituents often decreases the solubility of the PAG compound, which is associated with PAG compound aggregation and / or inhomogeneous PAG compound distribution in the photoresist layer, and with the formation of defects during and after lithographic processing.

Method used

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  • Photoacid-generating compound, polymer derived therefrom, photoresist composition including the photoacid-generating compound or polymer, and method of forming a photoresist relief image
  • Photoacid-generating compound, polymer derived therefrom, photoresist composition including the photoacid-generating compound or polymer, and method of forming a photoresist relief image
  • Photoacid-generating compound, polymer derived therefrom, photoresist composition including the photoacid-generating compound or polymer, and method of forming a photoresist relief image

Examples

Experimental program
Comparison scheme
Effect test

example 1

Synthesis of Photoacid Generator Compound TPS NB-AdOH-DFES

[0044]FIG. 1 presents a chemical scheme for the synthesis of the photoacid generator compound referred to as TPS NB-AdOH-DFES. The synthesis process was as follows. To a suspension of 5-norbornene-2,3-dicarboxylicanhydride (20 grams, 122 millimoles) and 3-(hydroxymethyDadamantan-1-ol (22.2 grams, 121.8 millimoles) in acetonitrile (150 milliliters) was added N,N-dimethylaminopyridine (1.5 grams, 12.27 millimoles) and the reaction mixture was stirred at 65° C. for 18 hours. The mixture was cooled to room temperature and concentrated aqueous hydrochloric acid was added until the pH was reduced to 2. The crude product was filtered and dried, before being suspended in ethyl acetate (150 milliliters) and stirred for 30 minutes at room temperature. Filtration produced 28 grams (yield: 66%) of pure product (1) as a white solid. 1H NMR (acetone-d6) δ: 6.22 (m, 1H), 6.17 (m 1H), 3.69 (d, 2H), 3.53 (d, 2H), 3.40 (m, 2H), 3.14 (m, 2H), 2...

example 2

Acid Diffusion Length Evaluation

[0046]Acid diffusion length was determined as follows. An acid detector layer formulation was prepared by combining Polymer A1 (2-adamantyl-2-propyl methacrylate / alpha-(gamma-butyrolactone) methacrylate / 1-hydroxyadamantyl-3-methacrylate terpolymer, 30 / 50 / 20 molar ratio, Mw=10,000 grams / mole) shown below (5.981 weight percent of total formulation), and tent-butyl-4-hydroxypiperdine-1-carboxylate as a quencher (0.019 weight percent of total formulation) in a 50 / 50 (w / w) mixture of propylene glycol methyl ether acetate (PGMEA) and methyl 2-hydroxyisobutyrate (HBM).

Separately, an acid source layer formulation was prepared by combining a tent-butyl acrylate / methacrylic acid copolymer (70 / 30 molar ratio, respectively; 0.891% w / w solution) and photoacid generator compound PAG (inventive or comparative) (153.40 micromoles / gram based on the total formulation) in an 80 / 20 (weight / weight) mixture of 2-methyl-1-butanol and decane. The acid detector layer formulat...

example 3

Lithographic Evaluation

[0051]Lithographic evaluation of the exemplary PAG was carried out according to the following procedure. Photoresists were formulated using the components and proportions shown in Table 2. The photoresist polymer (“Polymer A2”) used in all examples was a pentapolymer incorporating monomers M1, M2, M3, M4 and M5 having the chemical structures shown below, where the mole percentage of M1 / M2 / M3 / M4 / M5 is 20 / 20 / 30 / 20 / 10 for a total of 100 mole percent of monomers. The weight average molecular weight of the polymer was 8,000 grams / mole.

The PAG (see Table 2), base (t-butyloxycarbonyl-4-hydroxypyridine (TBOC-4HP), and surface leveling agent (PF 656 surfactant, available from Omnova), are given as weight percent based on 100% solids content, with the balance of the solids being the polymer. Propylene glycol monomethyl ether acetate (51) and methyl-2-hydroxyisobutyrate (55) were used as the solvents. The weight ratio of solvent S1:S5 in the final formulation was 1:1. Th...

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Abstract

A photoacid-generating compound has the structurewhere R1, R2, R3, R4, Q, and X are defined herein. The photoacid-generating compound can be used as a component of a photoresist composition, or as a monomer incorporated into a polymer useful in a photoresist composition. The photoacid-generating compound provides a desired balance of solubility and line width roughness.

Description

FIELD[0001]The present invention relates to a photoacid-generating compound, a polymer formed from an embodiment of the photoacid-generating compound comprising a polymerizable group, a photoresist composition comprising the photoacid-generating compound, the polymer, or a combination thereof, and a method of forming a photoresist relief image with the photoresist composition.INTRODUCTION[0002]Advance lithographic techniques such as electron beam and Extreme Ultraviolet (EUV) lithographies are being used for the formation of fine patterns. Further shrinking of pattern size to 25 nanometers and less requires, in addition to other process and exposure tool related requirements, the development of highly resolving chemically amplified photoresist compositions. The use of slow diffusion photoacid-generating (PAG) compounds has proved to be critical for the improvement in resolution and pattern quality. Slow acid diffusion in a chemically amplified photoresist composition was achieved by...

Claims

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Application Information

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IPC IPC(8): G03F7/004C08F218/14G03F7/039G03F7/20G03F7/32C07C309/12C07C321/30
CPCG03F7/0045C07C303/32G03F7/039G03F7/2053G03F7/322C07C309/12C07C321/30C07C2103/74C07C2102/42G03F7/38G03F7/30C07C69/753C08F232/08C07C309/00C08F218/14C07C381/12C07D303/40C07D317/34C07D317/72C07D327/08C07D333/76C07D335/16C07D339/08C07D409/12C07D519/00C08F220/28G03F7/004G03F7/027C08F220/282C08F220/281C08F220/18C07D493/18G03F7/0046G03F7/0397C08F2/50C07C2602/42C07C2603/74C08F220/1818C08F220/20C07C309/23G03F7/2004C07D493/08
Inventor AQAD, EMADWILLIAMS, III, WILLIAMLIU, CONG
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC