Circuit and electronic device including an enhancement-mode transistor

Abstract

An electronic device can include a channel layer and a barrier layer overlying the channel layer. In an embodiment, the electronic device can include a component disposed along a current path between a gate terminal and a gate electrode of a first transistor. In another embodiment, the electronic device can include a second transistor wherein source and gate electrodes of the second transistor are coupled to the gate electrode of the first transistor, and a drain electrode of the second transistor is coupled to the gate terminal. A circuit can include a transistor and a diode. The transistor can include a drain, a gate, and a source, wherein the drain is coupled to a drain terminal, and the source is coupled to a source terminal. The diode can have an anode is coupled to the gate terminal, and a cathode is coupled to a gate of the transistor.

Description

FIELD OF THE DISCLOSURE[0001]The present disclosure relates to circuits and electronic devices, and more particularly to, circuits and electronic devices including enhancement-mode transistors.RELATED ART[0002]High electron mobility transistors can include enhancement-mode transistors. One type of such transistor can include a p-type GaN gate electrode. A high electron mobility transistor having a p-type GaN gate electrode can have a threshold voltage of approximately 1.5 V. In an attempt to increase the threshold voltage, a component may be added between a gate terminal and the p-type GaN gate electrode. The component may include a Schottky diode between a metal gate interconnect and the p-type GaN gate electrode, where the metal gate interconnect is coupled to the cathode of the Schottky diode, and the p-type GaN gate electrode is coupled to the anode of the Schottky diode. In another structure, an n-type GaN layer may be disposed between the metal gate interconnect and the p-type...

AI Technical Summary

Benefits of technology

The patent describes an electronic device including two transistors. The first transistor has a gate electrode and a gate terminal, while the second transistor has a source electrode, a gate electrode, and a drain electrode. The source and gate electrodes of the second transistor are connected to the gate electrode of the first transistor, while the drain electrode of the second transistor is connected to the gate terminal. This arrangement allows for more efficient coupling and better performance of the electronic device.

Problems solved by technology

Such attempts to increase the threshold voltage can result in too high of a threshold voltage, the threshold can become unstable and may shift over time, or control over the transistor may be compromised.

Images