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Substrate treating liquid

Pending Publication Date: 2020-12-31
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a substrate treating liquid that can remove liquid from the surface of a substrate while preventing pattern collapse. This is achieved by using a combination of cyclohexanone oxime and a solvent such as alcohols, which prevents pattern collapse through sublimation drying. The substrate treating liquid can inhibit pattern collapse in the partial or local region of the substrate, including both hydrophobic and hydrophilic surfaces, and even when dealing with fine patterns. The content of cyclohexanone oxime should be between 0.1% and 10% by volume to ensure effective pattern inhibition. Overall, this invention provides a more efficient and effective substrate treatment process.

Problems solved by technology

Hence, there is a problem of a so-called pattern collapse in which, at the time of drying treatment, surface tension that acts on a boundary surface between a liquid such as a washing liquid or a rinse liquid in recesses in the pattern and a gas in contact with the liquid pulls and collapses the adjacent projections in the pattern.
However, when the pattern has extremely low mechanical strength, there may arise a problem of locally generating the region where pattern collapse occurs, even in the case of a conventional sublimation drying method.

Method used

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  • Substrate treating liquid

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0045]In the present example, the silicon substrate B was subjected to a drying treatment by the following procedure, and the effect of inhibiting pattern collapse was evaluated.

[0046]First, an aqueous hydrofluoric acid solution (volume ratio; hydrogen fluoride:water=1:10) as a washing liquid was supplied onto a pattern-formed surface (surface) of the silicon substrate B and then the pattern-formed surface was washed. Subsequently, deionized water (DIW) was supplied onto the washed pattern-formed surface of the silicon substrate B, and the pattern-formed surface was rinsed by replacing the washing liquid by DIW.

[0047]Moreover, IPA was supplied onto the pattern-formed surface of the silicon substrate B. IPA was supplied while rotating the silicon substrate B around, as a rotation axis, a vertical direction in the center of the silicon substrate B. IPA was supplied from the vertical direction in the center of the silicon substrate B. Whereby, DIW on the pattern-formed surface of the s...

reference example 1

[0057]In the present reference example, a silicon substrate A was used as the substrate. The content of cyclohexanone oxime was changed to 1.25% by volume based on the total volume of the substrate treating liquid. Moreover, the rotation speed of the silicon substrate A when the substrate treating liquid is supplied onto the pattern-formed surface of the silicon substrate A was changed to 0 rpm. In the same manner as in Example 1 except for that, a drying treatment of the silicon substrate A was performed. By the same method as in Example 1, the effect of inhibiting pattern collapse was also evaluated. As a result, the collapse rate of the pattern was 100.00%.

example 2

[0058]In the present example, a silicon substrate A was used as the substrate. The content of cyclohexanone oxime was changed to 1.25% by volume based on the total volume of the substrate treating liquid. Moreover, the rotation speed of the silicon substrate A when the substrate treating liquid is supplied onto the pattern-formed surface of the silicon substrate A was changed to 500 rpm. In the same manner as in Example 1 except for that, a drying treatment of the silicon substrate A was performed. By the same method as in Example 1, the effect of inhibiting pattern collapse was also evaluated. As a result, the collapse rate of the pattern was 0.42%. The occurrence of collapse (unevenness in collapse) of the pattern in the partial or local region was not confirmed on the pattern-formed surface.

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Abstract

The substrate treating liquid according to the present invention can be used for removing a liquid on a substrate such as a semiconductor substrate having a pattern-formed surface, and is characterized by including cyclohexanone oxime as a sublimable substance, and at least one solvent selected from the group consisting of alcohols, ketones, ethers, cycloalkanes and water.

Description

BACKGROUND OF THE INVENTIONField of the Invention[0001]The present invention relates to a substrate treating method, a substrate treating liquid and a substrate treating apparatus which remove, from substrates, liquids adhered to various types of substrates such as, for example, a semiconductor substrate, a substrate for a photomask glass, a substrate for a liquid crystal display glass, a substrate for a plasma display glass, a FED (Field Emission Display) substrate, a substrate for an optical disc, a substrate for a magnetic disc and a substrate for a magneto-optical disc.Description of Related Art[0002]In recent years, as a finer pattern has been formed on a substrate such as a semiconductor substrate, the aspect ratio of a projection in a pattern having recesses and projections (the ratio between the height and the width of the projection in the pattern) has been increased. Hence, there is a problem of a so-called pattern collapse in which, at the time of drying treatment, surfac...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/67
CPCC07C251/44H01L21/02057H01L21/6715H01L21/67034G03F7/40C11D7/3218C11D7/50H01L21/02052C11D2111/18C07C251/32C11D3/43C11D7/32C11D7/3209
Inventor SASAKI, YUTA
Owner DAINIPPON SCREEN MTG CO LTD