The application belongs to the technical field of gas sensing and neuromorphic sensing devices, and more particularly relates to a bionic olfactory sensor
chip and a preparation method and application thereof. The bionic olfactory sensor
chip comprises a gate
electrode, a
gate dielectric layer, a two-dimensional alpha-In2Se3 channel layer and a source
electrode and a drain
electrode connected thereto arranged in sequence. The polarization state of the two-dimensional alpha-In2Se3 channel layer is controlled by the gate electrode
voltage, so that when the sensor is exposed to a target gas, the electrical characteristics of the sensor are generated from the relaxation type nonvolatile change associated with the gas adsorption history, thereby realizing the memory of the gas
exposure event. The bionic olfactory sensor
chip provided by the application can work at
room temperature without heating, has the advantages of low
power consumption and dynamically adjustable sensing performance, is suitable for
environmental monitoring, industrial safety and embodied intelligent mobile terminals, and provides a key device for constructing an artificial
olfactory system and a neuromorphic sensing platform.