Thin-film transistor element and manufacturing method thereof
A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as rough surface of copper materials, affecting component quality, and easy deformation of copper materials, so as to solve existing problems and improve The effect on product reliability
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no. 1 example
[0018] 请参阅图2A-2D,用以说明根据本发明第一实施例的TFT工艺。
[0019] 请参阅图2A,首先形成一氧化钒层215于一基板210上,该基板210例如是玻璃或石英或透光性聚合物基板。该氧化钒层215例如是由化学汽相淀积法(CVD)或物理汽相淀积法(PVD)所淀积而得。在此举一范例,将该基板210放入反应性离子溅镀(reactive ion sputtering)装置中,以钒金属为靶(target),然后将氧气和氩气通入反应室内进行溅镀工艺,而淀积该氧化钒层215(其化学式通式为V x o y ,例如是VO 2 or V 2 o 5 等化学式)于该基板210上。该氧化钒层215的厚度可以是30~1000,而依此实施例的范例的最适当的厚度为50~200。
[0020] 请参阅图2B,接着将例如是经由溅镀法所淀积的Cu或Al或Mo或Ag或Ag-Pd-Cu或Cr或W或Ti或上述金属的合金的一金属层(未图示)淀积于该氧化钒层215上。之后,通过传统的光刻工艺图案化上述金属层而形成一栅极220。这里要说明的是,由于该栅极220与该基板210之间夹有当作是黏着层的该氧化钒层215,所以增加了该栅极220与该基板210之间的附着力。
[0021] 请参阅图2C,接着形成一栅极绝缘层230于该基板210上方而覆盖该栅极220与该氧化钒层215。该栅极绝缘层230可以是由氧化硅层或氮化硅层或氮氧化硅层或氧化钽层或氧化铝层所构成,或是由其它具有绝缘及保护功能的有机材料所构成(如:含碳氧类的硅化合物(Si x o y C z )、含碳氢氧类的硅化合物(Si x o y C z h n )、含碳类的硅化合物(Si x C z )、含氟类的碳化合物(C z f m )、以硅或碳为中心的星状结构化合物等)。
[0022] 仍请参阅图2C,然后形成一半导体层(未图示)于该栅极绝缘层230上,其中该半导体层例如包含有经由CVD法所淀积的非晶硅层(amorphoussilicon layer)与经掺杂的硅层(impurity-added silicon layer)。之后,通过传统的光刻工艺图案化上述半导体层而形成一沟道层240以及一欧姆接触层250。其中该欧姆接触层250例如是掺杂n型离子(例如P或As)的硅层或是掺...
no. 2 example
[0026] 请参阅图3A-3D,用以说明根据本发明第二实施例的TFT工艺。
[0027] 请参阅图3A,首先形成一栅极320于一基板310上。其中,该基板310例如是玻璃或石英或透光性聚合物基板,而该栅极320例如是经由溅镀法所淀积的Cu或Al或Mo或Ag或Ag-Pd-Cu或Cr或W或Ti或上述金属的合金的一金属层。
[0028] 请参阅图3B,接着将例如是由CVD或PVD所淀积的一氧化钒层325形成于该基板310与该栅极320上。在此举一范例说明该氧化钒层325的工艺,将包含有该栅极320的该基板310放入反应性离子溅镀(reactive ionsputtering)装置中,以钒金属为靶(target),然后将氧气和氩气通入反应室内进行溅镀工艺,而淀积该氧化钒层325(其化学式通式为V x o y ,例如是VO 2 or V 2 o 5 等化学式)覆盖该基板310与该栅极320。该氧化钒层325的厚度可以是30~1000,而依此实施例的范例的最适当的厚度为50~200。
[0029] 请参阅图3C,接着形成一栅极绝缘层330于该氧化钒层325上。该栅极绝缘层330可以是由氧化硅层或氮化硅层或氮氧化硅层或氧化钽层或氧化铝层所构成,或是由其它具有绝缘及保护功能的有机材料所构成(如:含碳氧类的硅化合物(Si x o y C z )、含碳氢氧类的硅化合物(Si x o y C z h n )、含碳类的硅化合物(Si x C z )、含氟类的碳化合物(Cz f m ), silicon or carbon-centered star structure compounds, etc.). It should be noted here that since the vanadium oxide layer 325 serving as a cap layer is interposed between the gate 320 and the gate insulating layer 330, the subsequent plasma process for depositing an insulating layer , the gate 320 can be protected by the van...
no. 3 example
[0034] Please refer to FIGS. 4A-4D to illustrate the TFT process according to the third embodiment of the present invention.
[0035] Referring to FIG. 4A , firstly, a first vanadium oxide layer 415 is formed on a substrate 410 , such as glass or quartz or a transparent polymer substrate. The first vanadium oxide layer 415 is deposited by, for example, CVD or PVD. Here is an example, put the substrate 410 into a reactive ion sputtering device, use vanadium metal as a target, and then pass oxygen and argon into the reaction chamber to perform a sputtering process to deposit the first vanadium oxide layer 415 (its chemical formula is V x o y , such as VO 2 or V 2 o 5 and other chemical formulas) on the substrate 410 . The thickness of the first vanadium oxide layer 415 may be 30-1000 Ȧ, and the most suitable thickness according to this embodiment is 50-200 Ȧ.
[0036] Referring to FIG. 4B , a gate 420 such as Cu, Al, Mo, Ag, Ag—Pd—Cu, Cr, W, Ti, or an alloy of the above m...
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