Control method for raising consistence of silicon epitaxial resistivity
A control method and technology of silicon epitaxy, applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve problems such as poor resistivity consistency, improve yield, avoid self-doping effect, and simple operation.
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Embodiment 1
[0031] 1. Put the polished and cleaned silicon wafer into pure water with 1% hydrogen peroxide and leave it for 3 minutes to form a 5nm clean oxide layer on the surface;
[0032] 2. Put the silicon wafer into the epitaxial furnace, pass nitrogen and hydrogen in sequence according to the traditional process, and then use high-purity hydrogen chloride for in-situ polishing, raise the temperature to 1220 degrees, and use nitrogen variable flow rate to catch the gas 4 times, each time 30s, the maximum flow rate is The normal growth ventilation flow rate, the small flow rate is 1 / 10 of the normal growth ventilation flow rate, which reduces the impurity concentration in the stagnant layer by 3-6 orders of magnitude;
[0033] 3. Cool down to 1100 degrees, and grow silicon intrinsic layer with silicon source gas, with a thickness of 0.5 μm;
[0034] 4. Use nitrogen variable flow rate to inflate 4 times, each time for 30s, the large flow rate is the normal growth ventilation flow rate,...
Embodiment 2
[0040] 1. Put the polished and cleaned silicon wafer into pure water with 0.5% hydrogen peroxide for 3 minutes, and a 3nm clean oxide layer will be formed on the surface.
[0041] 2. Put the silicon wafer into the epitaxial furnace, pass nitrogen and hydrogen in sequence according to the traditional process, and then use high-purity hydrogen chloride for in-situ polishing, raise the temperature to 1230 degrees, and use nitrogen variable flow rate to catch the gas 10 times, each time 20s, the maximum flow rate is Normal growth ventilation flow rate, the minimum flow rate is 1 / 10 of the normal growth ventilation flow rate.
[0042] 3. Lower the temperature to 1150°C, and grow a silicon intrinsic layer with a thickness of 0.3 μm by passing silicon source gas.
[0043] 4. Inflate 6 times with variable flow rate of nitrogen, 20s each time, the large flow rate is the normal growth ventilation flow rate, and the small flow rate is 1 / 10 of the normal growth ventilation flow rate.
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Embodiment 3
[0047] 1. After the silicon wafer is polished and cleaned, soak it in pure water containing ozone for 3 minutes. The amount of ozone introduced is 50-150ml / min, and the air is ventilated for 10-15 minutes to form a 4nm clean oxide layer on the surface of the silicon wafer;
[0048] 2. Put the silicon wafer into the epitaxial furnace, pass nitrogen and hydrogen in sequence according to the traditional process, and then use high-purity hydrogen chloride for in-situ polishing, raise the temperature to 1250 degrees, and use nitrogen variable flow rate to catch the gas 6 times, each time 15s, the maximum flow rate is The normal growth ventilation flow rate, the small flow rate is 1 / 10 of the normal growth ventilation flow rate, which reduces the impurity concentration in the stagnant layer by 3-6 orders of magnitude;
[0049] 3. Lower the temperature to 1160°C, grow silicon intrinsic layer with silicon source gas, with a thickness of 0.2 μm, and seal the front and side of the graphi...
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