CMOS photoelectric integrated receiver with pre-equalizing circuit
A balanced circuit and optoelectronic integration technology, applied in the direction of electromagnetic receivers, circuits, electrical components, etc., can solve the problem of low sensitivity, achieve good reliability, reduce the number of components, and improve stability
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[0023] The present invention is achieved by the following methods: figure 1 It is a cross-sectional view of the structure of the photodetector compatible with the standard CMOS process, figure 2 It is a schematic diagram of the pre-equalization circuit of the silicon optoelectronic integrated receiver of the present invention. Combine below figure 1 with figure 2 To elaborate:
[0024] figure 1 The process flow of the shown photodetector is as follows: first make a deep N well 2 on the P-type semiconductor substrate 1, then make two P wells 3 and 12 in the deep N well 2 and on the P-type substrate simultaneously, deep N well 2 and P well 3 are used to make interdigital photodetectors, and P well 12 is used as an N-type MOS transistor. Then an N well 13 is fabricated on the P-type substrate, wherein a P-type MOS transistor is fabricated. Then a polysilicon layer is deposited, and gates 14 and 15 of the NMOS transistor and the PMOS transistor are fabricated by photolitho...
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