Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Producing method for complementary metal oxide semiconductor image sensor

A technology of oxide semiconductors and image sensors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., and can solve problems such as difficulty in improving NMOS transistor characteristics and complex photodiode methods

Inactive Publication Date: 2008-11-12
CROSSTEK CAPITAL
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, because the above-mentioned process of forming the photodiode implements two masking and three ion implantation processes, the conventional method of forming the photodiode is very complicated
Also, boron ions, which typically form N-channel stop regions, cause nitrogen channeling phenomena at energy levels less than about 25KeV, thereby limiting the implementation of ion implantation energies.
As a result, it is difficult to improve the characteristics of the original NMOS transistor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Producing method for complementary metal oxide semiconductor image sensor
  • Producing method for complementary metal oxide semiconductor image sensor
  • Producing method for complementary metal oxide semiconductor image sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0016] Figures 3A to 3C It is a cross-sectional view showing a method of manufacturing a CMOS image sensor according to a preferred embodiment of the present invention. Figures 3A to 3C Only a photodiode and an original transistor region are shown.

[0017] Please refer to Figure 3A , a pad oxide layer and a nitride layer are deposited on a p-type substrate 30 (providing a p-type epitaxial layer), and patterned so that a part of the p-type substrate 30 is exposed. A pad oxide layer pattern 31 and a hard mask 32 are thus formed. Here, the hard mask 32 is formed with a predetermined thickness in consideration of the channelization phenomenon occurring during a subsequent ion implantation process (for forming an N-channel stop region). Preferably, the predetermined thickness of the hard mask 32 is about to about between. Afterwards, the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a method for fabricating a complementary metal oxide semiconductor (CMOS) image sensor. The method includes the step of: (a) forming a substrate of a first conductive type defined with a photodiode region and a native second conductive channel transistor region; and (b) forming a first conductive type impurity region by performing an ion-implantation process for forming a second conductive type channel stop region with a first conductive impurity ion, wherein the first conductive type impurity region is extended to the native second conductive type channel transistor region.

Description

technical field [0001] The invention relates to a manufacturing method of a complementary metal oxide semiconductor (CMOS) image sensor (image sensor), especially a complementary metal oxide semiconductor image sensor capable of improving the characteristics of the original N-channel metal oxide semiconductor (NMOS) transistor Manufacturing method of the sensor. Background technique [0002] In general, a CMOS image sensor is a semiconductor device that converts an optical image into an electrical signal. The CMOS image sensor includes: a light detection unit for detecting light; and a logic circuit for processing the detected light into electrical signals, and then converting the electrical signals into corresponding data. This CMOS technology adopts a switching mode in which outputs are sequentially detected by using a plurality of MOS transistors made with the same number as pixels. [0003] The CMOS image sensor is divided into a pixel region and a peripheral region. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/76H01L21/265H01L27/146H01L21/00H01L21/82H01L27/092
CPCH01L27/14689H01L27/14609H01L27/146H01L27/092
Inventor 李源镐
Owner CROSSTEK CAPITAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com