Carbon nano tube/copper composite plating membrane and method for preparing electricity interconnecting line
A technology of carbon nanotubes and multi-walled carbon nanotubes, which is applied in the manufacture of semiconductors/solid-state devices, circuits, electrical components, etc., can solve the problem of improving and preparing carbon nanotubes/copper-based high-conductivity composite materials that have not been found in literature reports and have not yet been discovered. Involving electrical performance and other issues, to achieve the effect of accelerating transmission capacity and speed, improving performance, and simple and easy process
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Embodiment 1
[0015] 1. Take the purified carbon tube, put it into a 5% polyacrylic acid (PAA) solution and ultrasonically wash it for 1 hour, filter it and dry it.
[0016] 2. Prepare the acidic copper plating composite plating solution, the specific formula is: copper sulfate containing five water: 150g / L, sulfuric acid: 60g / L, a small amount of brightener. Plating solution volume: 1L, carbon tube 1g.
[0017] 3. The above-prepared plating solution was ultrasonically dispersed for 60 minutes to form a stable suspension.
[0018] 4. Electroplating film formation: use brass thin plate as cathode, phosphor copper plate as anode, current density: 1A / dm 2 , temperature: 25°C, magnetic stirring, plating time 20 minutes.
[0019] The relatively flat coating obtained by the above process is well bonded to the substrate, and observed under a high-resolution electron microscope, uniform carbon tubes are distributed on the surface of the coating.
Embodiment 2
[0021] 1. Take the purified carbon tube, put it into a high-temperature vacuum heating furnace, heat it to 1600°C, and keep it warm for 1 hour.
[0022] 2. Preparation of acidic copper plating solution, specific formula: copper sulfate containing five water: 70g / L, sulfuric acid: 120g / L, Cl - : 50mg / L, a small amount of brightener. Plating solution volume: 1L, carbon tube 4g.
[0023] 3. The above-prepared plating solution was ultrasonically dispersed for 60 minutes to form a stable suspension.
[0024] 4. Thermally oxidize and grow a silicon oxide film on a silicon substrate, and form a silicon oxide micro-lead structure pattern by photolithography and etching.
[0025] 5. Deposit barrier layer TaN and Cu electroplating seed layer at micro-lead structure, with reference to step (4) method in the example 1, form carbon nanotube / copper composite coating on silicon oxide pattern surface electroplating, concrete parameter is: current density: 3A / dm 2 , temperature: 25°C, ult...
Embodiment 3
[0029] 1. Take the purified carbon tube, put it into a high-temperature vacuum heating furnace, heat it to 1600°C, and keep it warm for 1 hour.
[0030] 2. Preparation of acidic copper plating solution, specific formula: copper sulfate containing five water: 50g / L, sulfuric acid: 100g / L, Cl - : 50mg / L, a small amount of brightener. Plating solution volume: 1L, carbon tube 6g.
[0031] 3. The above-prepared plating solution was ultrasonically dispersed for 60 minutes to form a stable suspension.
[0032] 4. Deposit a Cu electroplating seed layer on the silicon substrate. Then, the photoresist is spin-coated on the substrate, and the lead structure is copied to the substrate by photolithographic pattern transfer technology to form a photoresist micro-mask pattern, and the electrical lead structure is formed in the area not covered by the mask after electroplating.
[0033] 5. Referring to the method of step (4) in Example 1, put the above-mentioned substrate into the plating ...
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