Process for preparaing reversing chip of pure-golden Au alloy bonding LED

Abstract

This is a process method of a pure Au and alloy LED. It is composed by a P-N expending slice, pure Au filling layer, alloy filling layer and a silicon underlay of reflection layer. The P-N expending slice includes a sapphirine underlay, a N-GaN layer on the underlay, a P-GaN layer on the N-GaN layer and a reflection layer in between. A metal layer which is good for current diffusion is deposited on the P-GaN layer. A P / N electrode is led from the P-GaN layer and the N-GaN layer separately. An isolation layer is formed in between the P / N electrode. An electric insulation layer is formed on a silicon underlay, to the top formed a metal reflection layer. The P-N expending slice is heat jointed with the silicon underlay by filling in pure Au and alloy.

Description

technical field

[0001] The invention relates to a manufacturing process method of a semiconductor device, in particular to a method for preparing a pure gold Au alloy-bonded LED flip-chip (Flip-Chip). Background technique

[0002] Light-emitting diode LED technology has developed to the present, and the improvement of unit luminous flux allows it to enter the field of lighting, which is called semiconductor lighting. Semiconductor lighting is a real revolution in lighting technology in the past century. Since semiconductor materials directly convert electrical energy into light, the biggest difference between semiconductor lighting and traditional lighting sources is that its light does not generate heat. However, the process of improving the luminous flux of high-power LEDs is accompanied by technical bottlenecks in heat dissipation. The success of heat dissipation treatment directly affects the optical parameters of semiconductor lighting and the life expectancy of product...

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