Chip buried-in modularize structure
A modular and chip technology, applied in electrical components, electro-solid devices, circuits, etc., can solve the problems of unformed multi-functional module structure, time-consuming production and cost, single semiconductor chip, etc., which is conducive to mass production, The effect of saving process time and shortening wiring length
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Example Embodiment
[0023] Example 1
[0024] See figure 2 , Which is a schematic cross-sectional view of Embodiment 1 of the modular structure embedded in the chip of the present invention. As shown in the figure, the modular structure embedded in the chip includes: a first dielectric layer 20; semiconductor chips 21a, 21b are connected to the first dielectric layer 20, and the semiconductor chips 21a, 21b are formed with A plurality of electrical connection pads 210a, 210b; a second dielectric layer 23, laminated or coated on the first dielectric layer 20, so that the semiconductor chips 21a, 21b are buried in the first dielectric layer 20 and the Between the second dielectric layer 23; and a circuit structure 24 formed on the second dielectric layer 23, and the circuit structure 24 is formed by a plurality of conductive structures 241 formed in the second dielectric layer 23 (may For example, conductive blind holes or bumps, etc.), which are electrically connected to the electrical connection p...
Example Embodiment
[0030] Example 2
[0031] See image 3 , Which is a schematic cross-sectional view of Embodiment 2 of the modular structure embedded in the chip of the present invention. The structure is substantially the same as that of Embodiment 1 of the present invention, and only the differences will be described below. As shown in the figure, the main difference between Embodiment 2 and Embodiment 1 is that there is a core layer 32 between the first dielectric layer 30 and the second dielectric layer 33, and a through hole 320 is formed in the core layer 32. 322, for the semiconductor chips 31a, 31b to be accommodated in the openings 320, 322, when the second dielectric layer 33 is interposed between the core layer 32 and pressed or coated on the first dielectric layer 30, the first And the second dielectric layer 30, 33 can be filled in the openings 320, 322, the semiconductor chips 31a, 31b are buried in the corresponding openings, and can be formed on the second dielectric layer 33 The...
Example Embodiment
[0032] Example 3
[0033] See Figure 4 , It is a schematic cross-sectional view of Embodiment 3 of the present invention. As shown in the figure, the modular structure embedded in the chip includes: a first dielectric layer 40; semiconductor chips 41a, 41b are connected to the first dielectric layer 40 And the semiconductor chips 41a, 41b are formed with a plurality of electrical connection pads 410a, 410b; the second dielectric layer 43 is pressed or coated on the first dielectric layer 40, so that the semiconductor chips 41a, 41b Buried between the first and second dielectric layers 40, 43; a circuit structure 44 is formed on the second dielectric layer 43, and the circuit structure 44 is electrically connected to the The electrical connection pads 410a, 410b of the semiconductor chips 41a, 41b; the circuit structure 45, which is formed on the outer surface of the first dielectric layer 40; and the conductive via 46, which penetrates the first and second dielectric layers 40,...
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