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Plasma film-forming method and plasma film-forming apparatus

A film-forming method and film-forming device technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as hindering the formation of fluorocarbon films and the speed of dust film formation.

Inactive Publication Date: 2009-08-12
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although increasing the operating pressure can reduce the temperature of the electrons and avoid excessive decomposition of raw materials, it will also bring about the aforementioned problems such as dust and film formation speed. a cause of formation

Method used

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  • Plasma film-forming method and plasma film-forming apparatus
  • Plasma film-forming method and plasma film-forming apparatus
  • Plasma film-forming method and plasma film-forming apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] use figure 1 The plasma film-forming device was used to form CF films under different raw material gas types and process conditions. The dielectric constant and leakage current of each CF film were tested, and the obtained Image 6 The results shown. exist Image 6 , the vertical axis represents the leakage current value when an electric field of 1 MV / cm is applied to the insulating film, and the horizontal axis represents the dielectric constant of the insulating film. For each raw material gas, the inventor has collected a large amount of data, and the variation trend of data is identical, therefore, Image 6 Only representative data are shown.

[0053] □ is the data when C3F6 gas is used as the raw material gas, △ is the data when C4F6 gas is used, ■ is the data when C4F8 gas is used, and ◇ is the data when C5F8 gas is used. Corresponding to these data, the process conditions set in order to obtain CF membranes are as follows: the working pressure is 6.65-19.95Pa ...

Embodiment 2

[0061] Second, use figure 1 The plasma film forming device, the raw material gas uses C5F8 and the pressure of the processing atmosphere (working pressure) is set to 6.65Pa (50mTorr), 13.3Pa (100mTorr), 19.95Pa (150mTorr), 26.6Pa (200mTorr) 4 pressures, After the CF films were formed by changing the process conditions under various pressures, the dielectric constant and leakage current of each CF film were detected. The result is as Figure 7 shown. Figure 7 , the vertical axis represents the leakage current value when an electric field of 1 MV / cm is applied to the insulating film, and the horizontal axis represents the dielectric constant of the insulating film. The so-called process conditions include the distance between the second gas supply part 3 and the wafer (refer to figure 1 ), microwave power, argon flow, raw gas flow, and wafer temperature, etc. In this experiment, the above process conditions were combined without changing the operating pressure to form a CF...

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Abstract

In this plasma film forming method and apparatus, the upper opening of the vacuum chamber is sealed with a dielectric and a planar antenna member is provided thereon. A coaxial waveguide is provided on the planar antenna member, and the microwave generating mechanism is connected to the waveguide. A plurality of slits, for example, half the length of the microwave wavelength are provided concentrically on the planar antenna member, and microwaves are emitted from these slits, for example, in a circularly polarized manner to the processing atmosphere to plasmatize the raw material gas and generate A fluorocarbon film is formed in a plasma whose velocity is defined as an electron temperature of 3eV or less and an electron density of 5×1011 electrons / cm3 or more. In this case, it is best to set the working pressure below 19.95Pa. By adopting such a scheme, when the fluorocarbon film is formed by plasma, the molecular chain of the raw material gas such as C5F8 gas can be properly decomposed to obtain a chain structure with a long CF chain, thereby forming a low dielectric constant and a small leakage current. Excellent interlayer insulating film.

Description

technical field [0001] The present invention relates to a plasma film-forming method and a plasma film-forming apparatus for forming an insulating film, such as a fluorocarbon film (fluorocarbon film), by plasma. Background technique [0002] As a method for highly integrating semiconductor devices, a multilayer wiring structure is used. In order to adopt a multilayer wiring structure, the wiring layer of the nth layer and the wiring layer of the (n+1)th layer must be connected through a conductive layer, and a so-called interlayer insulating film must be formed in a region other than the conductive layer. film. A typical interlayer insulating film is a silicon oxide film, and in order to further increase the operating speed of the device, the dielectric constant of the interlayer insulating film should be lowered. [0003] Against this background, fluorocarbon films have attracted attention, and the use of the above-mentioned fluorocarbon films can greatly reduce the diel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/314H01L21/31
Inventor 小林保男川村刚平浅野明寺井康浩西泽贤一
Owner TOKYO ELECTRON LTD