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Method for preparing anisotropic organic field effect tube combined with stamp technology

An anisotropic, organic field technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of uneven film performance, poor repeatability, easy introduction of impurities, etc. High controllability and good repeatability

Active Publication Date: 2009-09-23
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has low controllability, poor repeatability, uneven film properties and easy introduction of impurities

Method used

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  • Method for preparing anisotropic organic field effect tube combined with stamp technology
  • Method for preparing anisotropic organic field effect tube combined with stamp technology
  • Method for preparing anisotropic organic field effect tube combined with stamp technology

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Experimental program
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Embodiment Construction

[0010] The flow chart of invention (the section in the flow chart is Figure 1-8 A-A profile in ):

[0011] 1, such as Picture 1-1 As shown, the dielectric layer thin film is prepared on the surface of the silicon substrate by thermal oxidation growth technology or chemical vapor deposition technology.

[0012] 2, such as Figure 1-2 As shown, the first layer of organic semiconductor thin film is vacuum deposited on the surface of the dielectric layer.

[0013] 3, such as Figure 1-3 As shown, the imprinting process was carried out on the surface of the first organic semiconductor thin film with the prepared template.

[0014] 4, such as Figure 1-4 As shown, the imprint template is removed, and the pattern on the template is transferred to the surface of the first layer of organic semiconductor film.

[0015] 5, such as Figure 1-5 As shown, a second layer of homogeneous organic film was deposited on the surface of the imprinted first layer of organic film. Induced b...

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Abstract

The invention belongs to the micro machining field in organic semiconductor physics, especially relating to a method of preparing anisotropic organic field effect transistor by combing with the imprinting technique, and comprising the steps of: 1. preparing insulating medium layer on conductive substrate; 2. depositionally growing first layer of organic semiconductor film on the surface of the insulating medium layer; 3. imprinting organic film by template and transferring the designed template figure onto the first layer of organic film; 4. deposit-grow second layer of homogenous organic film; and 5. depositing source / drain metal electrodes by hollow mask and completing preparing the transistor.

Description

technical field [0001] The invention belongs to the field of microfabrication in organic semiconductors, in particular to a method for preparing anisotropic organic field effect tubes in combination with embossing technology. Background technique [0002] With the continuous deepening of information technology, electronic products have entered every aspect of people's life and work; in daily life, people's demand for low-cost, flexible, low-weight, and portable electronic products is increasing; traditional inorganic semiconductor-based It is difficult for devices and circuits of materials to meet these requirements, so organic microelectronics technology based on organic polymer semiconductor materials that can realize these characteristics has received more and more attention under this trend. Improving the mobility of organic field effect transistors has always been a goal pursued by this field. In the process of studying how to improve the performance of organic transis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/40
Inventor 商立伟涂德钰王丛舜刘明
Owner SEMICON MFG INT (SHANGHAI) CORP