Method for preparing cubic boron nitride thin film
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- BEIJING UNIV OF TECH
- Publication Date
- 2009-11-11
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The invention relates to a method for preparing a cubic boron nitride thin film by combining vapor deposition and annealing technology. The invention belongs to the field of wide bandgap semiconductor or superhard material film preparation. Background technique
[0002] Boron nitride (BN) is a new wide bandgap semiconductor material. In the boron nitride system, hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN) are the two stable main phases. Among them, cubic boron nitride has outstanding physical, chemical and mechanical properties. Therefore, the research on its material preparation and characteristics, as well as the exploration of industrialization and deviceization have been the research topics of scientific researchers in various countries and well-known semiconductor companies such as US G.E., IBM, and British DeBeers in recent years.
[0003] The hardness and thermal conductivity of cubic boron nitride are second only to diamond...