Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for measuring several critical strain values of metal membrane in flexible substrate

A technology for metal thin films and flexible substrates, which is applied in the field of testing several critical strain values ​​of metal thin films, can solve the problem that the determination method has not been reported before, and achieve the effect of reducing the sudden failure of devices

Inactive Publication Date: 2009-11-18
山东合创涂层技术有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For a long time, great attention has been paid to this problem at home and abroad, but there have been no reports about the specific determination method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] The polyimide flexible substrate is processed into a traditional tensile sample shape, the narrow and long area in the middle (20×6mm) is the effective working area of ​​the sample, and the wide areas at both ends are the tensile clamping area. Using magnetron sputtering technology to deposit metal Cu film on the effective working area, the film thickness is 200 nm, the deposition process parameters are: sputtering power 150W; sputtering bias -80V; background pressure 4.5×10 -3 Pa; working pressure (Ar) 0.1Pa. Use a micro-tensile machine with a range of 250N to stretch the metal film / flexible substrate system to measure the stress σ-strain ε curve of the metal film, and use resistance testing equipment to measure the relative change Δ of the metal film resistance with the strain ε during the stretching process; through scanning The microscope continuously observes the microstructure change of the metal film during the stretching process, and draws the microcrack percent...

Embodiment 2

[0016] The polyimide flexible substrate is processed into a traditional tensile sample shape, the narrow and long area in the middle (20×6mm) is the effective working area of ​​the sample, and the wide areas at both ends are the tensile clamping area. Using magnetron sputtering technology to deposit metal Al film on the effective working area, the film thickness is 1.2 microns, the deposition process parameters are: sputtering power 200W; sputtering bias -70V; background pressure 3.0×10 -3 Pa; working pressure (Ar) 0.2Pa. The metal film / flexible substrate system was stretched by a micro-tensile machine with a measuring range of 250N, and the resistance test equipment was used to measure the relative change of the metal film resistance Δ with the change of the strain ε during the stretching process; the metal film was continuously observed during the stretching process through a scanning microscope. Changes in microstructure, draw the percentage of microcracks f-strain ε curve....

Embodiment 3

[0018] The polyimide flexible substrate is processed into a traditional tensile sample shape, the narrow and long area in the middle (20×6mm) is the effective working area of ​​the sample, and the wide areas at both ends are the tensile clamping area. Using magnetron sputtering technology to deposit metal Cu film on the effective working area, the film thickness is 2.5 microns, the deposition process parameters are: sputtering power 120W; sputtering bias -80V; background pressure 4.5×10 -3 Pa; working pressure (Ar) 0.1Pa. The metal film / flexible substrate system was stretched by a micro-tensile machine with a measuring range of 250N, and the resistance test equipment was used to measure the relative change of the metal film resistance Δ with the change of the strain ε during the stretching process; the metal film was continuously observed during the stretching process through a scanning microscope. Changes in microstructure, draw the percentage of microcracks f-strain ε curve....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a test method for several critical strain values ​​of a metal thin film on a flexible substrate, which includes stretching the metal thin film / flexible substrate system with a good interface with a slight force, and recording the stress-strain curve of the metal thin film during the stretching process And the resistance change-strain curve, and at the same time continuously observe the microstructure change of the metal film through microscopic analysis, and obtain the microcrack percentage-strain curve. The strain at the moment when the resistance change on the resistance change-strain curve changes from the linear stage to the nonlinear stage is defined as the critical crack initiation strain; the theoretical strain when the percentage of microcracks in the microcrack percentage-strain curve is deduced to zero is defined as the critical crack Extended strain; the strain at the moment when the resistance increases sharply on the resistance change-strain curve is defined as the critical crack instability strain. The three critical strains constitute the failure critical strain system of the metal thin film in the metal thin film / flexible substrate system.

Description

technical field [0001] The invention relates to a method for testing several critical strain values ​​of metal thin films in industries such as microelectronics, in particular to a method for testing several critical strain values ​​of metal thin films on flexible substrates. Background technique [0002] Flexible circuit boards are widely used in VLSI and microelectromechanical systems (MEMS). Usually, metal thin film materials (such as Cu and Al) used as metallized wiring are deposited on the flexible substrate to form a metal thin film / flexible substrate. system. As a metal structure thin film material for engineering, its plasticity or critical fracture strain is an extremely important index, which can be used for material safety design and life prediction. For a free metal film or a metal thin film deposited on a rigid substrate, its tensile properties are usually locally destabilized and rapidly fractured after destabilization, so it is easy to directly determine its ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/04G01N27/20G01N3/08G01N1/28
Inventor 孙军刘刚牛荣梅丁向东江峰宋忠孝徐可为
Owner 山东合创涂层技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products