Wafer heater assembly

Abstract

A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon 'wire' or 'braided' structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth / deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.

Description

technical field [0001] The present invention relates to substrate holders, and more particularly to single wafer heater assemblies having low thermal mass and fast response times in substrate holders. Background technique [0002] With the advancement of semiconductor manufacturing technology, the diameter of semiconductor wafers has been increased to provide more semiconductor circuits to meet higher requirements for higher yields and lower costs. In order to provide better yields, improved temperature control is often required. [0003] During semiconductor processing, substrate holders can be used to control the temperature of the wafer / substrate. In single wafer processing, single piece resistive heaters are used, but they are difficult to control. Issues with conventional single wafer heater systems include: potential metal contamination of components; restricted thermally isolated area (limited by heater / pedestal thermal stress cracking issues); reduced uniformity of...

AI Technical Summary

Problems solved by technology

In single-wafer processing, single-piece resistive heaters are used, but they are difficult to control

Issues with conventional single wafer heater systems include: potential metal contamination of components; restricted thermally isolated area (limited by heater / pedestal thermal stress cracking issues); reduced uniformity of edge heat loss effects; Mass-limited thermal response time; wafer warpage and slippage defects due to excessive thermal gradients across the wafer

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