Method for producing chip-bearing disc protective layer

Abstract

The invention relates to a wafer loading disk protective layer manufacturing method. The loading wafers go along wafer manufacturing and washing process in the plant response room, improve the corrosion resistance of the loading disk, of which mainly supplies a wafer loading disk with the main material, the capacity space for containing the loading wafer installed on the front face of the loading disk, and then adding a heat resistant epoxy resin into SiC of the loading surface into a mixture, through soaking procedures to cover the mixture directly on the disk outer surface, the formation of uniform procedures baking protective layer to reduce the load disk surface spalling or deformation opportunities.

Description

technical field [0001] The invention relates to a carrying device, in particular to a carrying plate for carrying semiconductor wafers. Background technique [0002] Integrated circuits are almost ubiquitous in our daily lives. They are not only used in the computer industry that we are familiar with, but also in various consumer electronics or communication products, such as audio, television, and wireless phones. etc. In addition, the value and influence of integrated circuits in the future transportation industry (such as automobiles) and multimedia industry is also difficult to estimate, so all countries in the world are putting all their efforts into this high-tech industry. [0003] However, the manufacturing technology of integrated circuits is very complicated, requiring quite a lot of lengthy steps, and quite time-consuming, from the steps of wafer pulling, manufacturing and dicing, to the subtle VLSI manufacturing process and some common heat treatment procedures, ...

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Problems solved by technology

[0007] But as we all know, the sputtering process is a high-cost technical means, which requires necessary equipment. In addition, the protective layer generated by the sputtering process on the surface of the wafer carrier disc 11 often has inconsistent thickness, especially the sputtering process. The formation of the protective layer is easy to produce dead angles, so that the formation of the protective layer on the surface of the carrier plate 11 is not complete, so that the carrier plate 11 will still be damaged during the chemical vapor deposition reaction, affecting its service life and increasing the chance of polluting particles

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