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Sb doped P-type ZnO crystal film and preparation method thereof

A thin film and crystal technology, applied in the field of preparation of p-type ZnO crystal thin films, can solve the problems of low p-type conduction repeatability and stability, low solid solubility, deep acceptor energy level, etc. The effect of high concentration doping and low formation energy

Inactive Publication Date: 2007-09-19
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still some problems with N element doping: such as low solid solubility of the acceptor, deep acceptor energy level, and low repeatability and stability of p-type conduction.

Method used

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  • Sb doped P-type ZnO crystal film and preparation method thereof
  • Sb doped P-type ZnO crystal film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] 1) Weigh ZnO and Sb with a purity of 99.99% 2 o 3 Powder, wherein the molar percentage of Sb is 2%. The weighed ZnO and Sb 2 o 3 The powder is poured into a ball mill jar equipped with agate balls, and milled on a ball mill for 12 hours, the purpose is to make the powder mix uniformly and refine to a certain extent. Then the raw materials are separated and dried, added with a binder for grinding, and pressed into shape. Put the molded green body into the sintering furnace, discharge elements at low temperature (400°C) to volatilize the binder, and then raise the temperature to 1200°C for sintering for 2 hours to obtain a Sb-doped ZnO ceramic target.

[0017] 2) Fix the quartz substrate on the sample stage after being cleaned, and put it into the growth chamber 2 . The Sb-doped ZnO ceramic target is installed on the target frame, and then embedded in the target holder of the pulsed laser deposition device. The distance between the substrate 4 and the target 3 was a...

Embodiment 2

[0021] 1) Weigh ZnO and Sb with a purity of 99.99% 2 o 3 Powder, wherein the molar percentage of Sb is 1.5%. The weighed ZnO and Sb 2 o 3 The powder is poured into a ball mill jar filled with agate balls, mixed evenly by ball milling, and pressed into shape. Put the molded green body into the sintering furnace, discharge elements at 400°C to volatilize the binder, then raise the temperature to 1000°C and sinter for 2 hours to obtain a Sb-doped ZnO ceramic target.

[0022] 2) Fix the silicon substrate on the sample stage after cleaning, and put it into the growth chamber. The Sb-doped ZnO ceramic target was placed in the target holder of the pulsed laser deposition device. Adjust the distance between the substrate and the target to 5.5 cm, and place the baffle between the substrate and the target. Vacuum the growth chamber to 4×10 -4 Pa, the substrate is heated to 600°C. Pure O 2 , the pressure is controlled at 0.1Pa. Turn on the laser (pulse laser energy 300mJ, frequ...

Embodiment 3

[0025] 1) Weigh ZnO and Sb with a purity of 99.99% 2 o 3 Powder, wherein the molar percentage of Sb is 4%. The weighed ZnO and Sb 2 o 3 The powder is poured into a ball mill jar, the ball mill is mixed evenly, and pressed into shape. Put the molded green body into the sintering furnace, discharge elements at 400°C to volatilize the binder, then raise the temperature to 1100°C and sinter for 2 hours to obtain a Sb-doped ZnO ceramic target.

[0026] 2) Fix the glass substrate on the sample stage after cleaning, and put it into the growth chamber. The Sb-doped ZnO ceramic target was placed in the target holder of the pulsed laser deposition device. Adjust the distance between the substrate and the target to be 4.5 cm, and place the baffle between the substrate and the target. Vacuum the growth chamber to 4×10 -4 Pa, the substrate is heated to 400°C. Pure O 2 , the pressure is controlled at 0.7Pa. Turn on the laser (pulse laser energy is 300mJ, frequency 3Hz), pre-deposi...

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Abstract

The invention discloses a method for preparing Sb-intermingled growing p-type ZnO crystal film, including the step of: weighing ZnO and SbO3 powder, wherein mol percent of Sb is 1.5-4%, mixing the powders uniformly by ball milling and compressed molding, and sintering them to produce Sb-intermingled ZnO ceramic target; placing the ceramic target and the substrate into the the growing chamber of pulse laser depositing apparatus, growing the film on the substrate by the pulse laser depositing method, annealing at the oxygen atmosphere after growing, cooling them to room temperature. The inventive method is simple, different-intermingling-concentration p-type ZnO crystal film can be produced by adjusting mol percent of Sb in the target matarials, and high-concentration intermingling can be carried out because intermingled elments come from the target materials; SbZn-2VZn complex is produced by making Sb to occupy the position of Zn, while to be induced to produce both empty positions of Zn, compared with N element in V group the producing energy of the complex is lower, accordingly the produced p-ZnO film has good the repeatability and the stability.

Description

technical field [0001] The invention relates to a preparation method of a p-type ZnO crystal thin film, in particular to a preparation method of a Sb-doped p-type ZnO crystal thin film. Background technique [0002] The preparation of n-type and p-type ZnO transparent conductive crystal thin films with excellent performance is the key to realize the wide application of ZnO in the field of optoelectronics. The n-type doping of ZnO is relatively easy to realize, but the preparation of p-type ZnO thin films is relatively difficult. This is partly due to the presence of many intrinsic defects in ZnO, such as zinc interstitials (Zn i ) and oxygen vacancies (V o ) will produce a highly self-compensating effect; on the other hand, it is due to the deep acceptor energy level and the low solid solubility of acceptor impurities. How to achieve real-time doping of p-type ZnO thin films with excellent properties has become a bottleneck restricting the development of ZnO-based optoele...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B23/00
Inventor 叶志镇潘新花
Owner ZHEJIANG UNIV
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