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Multilayer nanometer porous SnO2 film and its synthesis process

A technology of tin dioxide and nano-film, applied in the direction of material resistance, etc., can solve problems such as unsatisfactory performance, and achieve the effects of low power consumption, good chemical stability, and simple process

Inactive Publication Date: 2007-10-03
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing SnO 2 The performance of nano gas-sensitive films is still unsatisfactory when detecting trace gases

Method used

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  • Multilayer nanometer porous SnO2 film and its synthesis process

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Experimental program
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Effect test

Embodiment 1

[0033] In the first step, the metal inorganic salt SnCl 2 2H 2The consumption of O and dehydrated alcohol is respectively 40ml and 3.462g, and the concentration of the precursor solution that is used to make tin dioxide nanofilm is 0.38mol / L; In the second step, tensio-active agent is polyethylene glycol 2000 , the addition amount is 0.036g, the weight ratio of surfactant to precursor solution is 0.1%; in the third step, at 25°C, magnetic stirring is carried out for 2.5 hours, the stirring speed is 400 rpm, and the aging time is 24 hours. The magnetic stirrer used It is a digital display constant temperature magnetic stirrer with a model of HOI-1B; in the fourth step, the single crystal silicon substrate is a silicon wafer with a resistivity, thickness and crystal orientation of 8Ω·cm, 380±10μm and (111) respectively, at 2500 Under the rotating speed of rev / min, glue evenly 25 seconds, glue film thickness is 150 nanometers, used glue even machine is the desktop glue even mach...

Embodiment 2

[0035] In the first step, the metal inorganic salt SnCl 2 2H 2 The consumption of O and dehydrated alcohol is respectively 40ml and 3.644g, and the concentration of the precursor solution that is used to make tin dioxide nano film is 0.4mol / L; In the second step, tensio-active agent is polyethylene glycol 2000 , the addition amount is 0.4g, and the weight ratio of surfactant to precursor solution is 1.1%; in the third step, at 80°C, stir magnetically for 3 hours at a stirring speed of 500 rpm, and age for 42 hours. The magnetic stirrer used It is a digital display constant temperature magnetic stirrer with a model of HOI-1B; in the fourth step, the single crystal silicon substrate is a silicon wafer with a resistivity, thickness and crystal orientation of 8Ω·cm, 380±10μm and (111) respectively, at 3000 Under the rotating speed of rev / min, glue uniformly 35 seconds, film thickness is 200 nanometers, used glue homogenizer is the desktop glue homogenizer of KW-4A type; The mono...

Embodiment 3

[0037] In the first step, the metal inorganic salt SnCl 2 2H 2 The consumption of O and dehydrated alcohol is respectively 40ml and 4.1g, and the concentration of the precursor solution that is used to make tin dioxide nanofilm is 0.45mol / L; In the second step, tensio-active agent is polyethylene glycol 2000 , the addition amount is 1.2g, and the weight ratio of surfactant to precursor solution is 3.18%; in the third step, at 95°C, stir magnetically for 3.5 hours at a stirring speed of 600 rpm, and age for 60 hours. The magnetic stirrer used It is a digital display constant temperature magnetic stirrer with a model of HOI-1B; in the fourth step, the single crystal silicon substrate is a silicon wafer with a resistivity, thickness and crystal orientation of 8Ω·em, 380±10μm and (111) respectively, at 3000 Under the rotating speed of rev / min, glue evenly 50 seconds, glue film thickness is 250 nanometers, used glue even machine is the desktop type glue even machine of KW-4A; The...

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Abstract

The multilayer nanometer porous SnO2 film and its synthesis process belongs to the field of gas sensitive material and gas sensor preparing technology. Nanometer porous SnO2 film in 6-12 layers are deposited successively onto monocrystalline silicon substrate through the following six steps: preparing solution with SnCl2.2H2O as the precursor and anhydrous alcohol as solvent, adding surfactant, preparing sol, homogenizing, annealing, etc. The present invention has simple technological process, and the multilayer nanometer porous SnO2 film has high chemical stability, small power consumption, great specific surface area and high gas sensitivity, and is suitable for making gas sensor for measuring micro amount of gas.

Description

technical field [0001] The present invention relates to porous tin dioxide (SnO 2 ) The multilayer nano film and its synthesis method belong to the technical field of gas sensitive sensing material and gas sensitive sensing preparation. Background technique [0002] The industrial revolution increased labor productivity and enriched people's material and cultural life, but it also brought serious environmental problems. In recent years, NOx, SOx and HCl in the air have caused acid rain; CO in the air 2 , CH 4 , NO 2 , O 3 and fluorocarbon (freon) gases cause the greenhouse effect; fluorocarbons and halocarbons in the air cause ozone layer damage; NH 3 , H 2 S emits a pungent smell, and acid rain, greenhouse effect, and ozone layer depletion threaten the survival of human beings and arouse the attention of the whole society. The transmission pipelines of liquefied petroleum gas and natural gas often leak, which can easily cause fire, explosion an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
Inventor 杨平雄秦苏梅
Owner EAST CHINA NORMAL UNIV
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