Method for preparing one dimension SiC Nano fiber

A nanowire and graphite powder technology, applied in the field of preparation of SiC nanomaterials, can solve the problems of difficult growth control, complex process, low conversion rate, etc., and achieve the effects of low raw material and preparation cost, simple process and high conversion rate

Inactive Publication Date: 2007-10-10
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing one-dimensional SiC nanowires in order to solve the problems of complex process, high cost, difficult growth control, low purity and low conversion rate.

Method used

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  • Method for preparing one dimension SiC Nano fiber
  • Method for preparing one dimension SiC Nano fiber
  • Method for preparing one dimension SiC Nano fiber

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specific Embodiment approach 1

[0010] Specific embodiment one: the method for preparing silicon carbide nanowires in this embodiment adopts the method of in-situ reaction, realizes through the following steps: a, take by weighing Si powder that purity is 99.99% by the molar ratio of 0.8~1.2:1 and Graphite powder, after Si powder and graphite powder are mixed; b, the mixture is packed in the vacuum ball milling jar, selects the ball material ratio as 20~35: 1, fills the ball milling jar with a vacuum and the purity of 0.01~0.2 atmospheric pressure is 99.9999% argon, put the ball mill jar on a high-energy ball mill for 12-48 hours at a speed of 430-510 rpm, and the particle size reaches 5-50nm; 3 with H 2 The volume ratio of O is 0.8 ~ 1.2:1 nitric acid solution soaked for 20 ~ 36h, then pour off the nitric acid, and pickle again according to the above method; d, the powder after pickling is washed with distilled water; Add an organic solvent to the powder, and disperse ultrasonically for 10-15 minutes; f. L...

specific Embodiment approach 2

[0012] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that in step g, the suspended liquid after standing still is dropped onto the cleaned substrate surface or porcelain boat, and then baked at 60-80°C Dry. Other steps are the same as in the first embodiment.

specific Embodiment approach 3

[0013] Specific embodiment three: the difference between this embodiment and specific embodiments one and two is that the molar ratio of Si powder and graphite powder in step a is 1:1. Other steps are the same as those in Embodiments 1 and 2.

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Abstract

This invention discloses a method for preparing one-dimensional SiC nanowires. The method solves the problems of complex process, high cost, and uneasy control of the growth, low purity and low conversion rate. The method comprises: mixing Si powder and graphite powder, ball-milling for 12-48 h, washing with acid, washing with water, adding an organic solvent, dispersing by ultrasonication for 10-15 min, standing for 10 min-2 h, spreading on a substrate or a ceramic boat, placing the substrate or the ceramic boat in a heater, vacuumizing to 10-2-10-1 Pa, introducing Ar to 0.5-1 atmospheric pressure or keeping vacuum, heating at a rate of 5 deg.C / min or 10 deg.C / min to 900-1200 deg.C, and keeping for 1-5 h. The method has such advantages as simple process, no need for catalyst, low cost, easy control of the growth, high purity and high conversion rate.

Description

technical field [0001] The invention relates to a preparation method of SiC nanometer material. Background technique [0002] The preparation of metal or ceramic nano-one-dimensional structures has aroused great interest. Silicon carbide has excellent high temperature resistance, and the elasticity and strength of silicon carbide nanowires are much higher than those of silicon carbide fibers or silicon carbide. At the same time, silicon carbide is also A semiconductor material, silicon carbide nanowires or nanotubes have great potential application value in nanostructure materials, functional materials and optoelectronic devices, field emission cathode electron sources and high-density integrated electronic devices. [0003] The existing preparation methods of SiC nanowires include: template method, chemical vapor deposition method, arc discharge method, sol-gel method and carbothermal reduction method; [0004] In the above-mentioned preparation method, the template method...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36B82B3/00
Inventor 康鹏超武高辉苏军
Owner HARBIN INST OF TECH
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