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Method for preparing low voltage light-emitting macro ZnO semiconductor single crystal material

A single crystal material, semiconductor technology, applied in luminescent materials, semiconductor devices, chemical instruments and methods, etc., to achieve the effect of changing resistance characteristics

Inactive Publication Date: 2007-11-14
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, up to now, there have been no relevant reports on the use of the above-mentioned technical means to make macroscopic ultra-long ZnO semiconductor single crystal materials produce luminescence under low pressure.

Method used

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  • Method for preparing low voltage light-emitting macro ZnO semiconductor single crystal material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] (1) Use a quartz plate as a substrate, ultrasonically clean it in absolute ethanol and dry it in air;

[0018] (2) Put the single ZnO semiconductor single crystal structure stripped from the macroscopic ultra-long ZnO single crystal cluster on the silicon wafer, and only the two ends are bonded with silver paste; put it in an oven, bake at 120 ° C for 15 minutes, Then bake at 375°C for 20 minutes; make a single ZnO semiconductor single crystal structure firmly bonded to the silicon wafer, and prepare a sample for testing;

[0019] (3) Put the sample into the vacuum chamber, turn on the vacuum pump to evacuate to 5Torr;

[0020] (4) Pass H at a certain flow rate 2 Gas, adjust the ventilation valve of the vacuum chamber to keep the vacuum degree in the growth chamber constant at 10Torr; turn on the switch of the plasma processor and adjust the power to 170W; under this power, keep the hydrogen plasma gas bombarding the sample for 60 minutes;

[0021] (5) After the bomba...

Embodiment 2

[0024] (1) Use a glass slide as a substrate, ultrasonically clean it in absolute ethanol and dry it in air;

[0025] (2) Put the single ZnO semiconductor single crystal structure stripped from the macroscopic ultra-long ZnO single crystal cluster on a glass slide, and only the two ends are bonded with silver paste; put it in an oven and bake at 125°C for 15 minutes , and then baked at 385 ° C for 20 minutes; make a single ZnO semiconductor single crystal structure firmly bonded on a glass slide to prepare a sample for testing;

[0026] (3) Put the sample into the vacuum chamber, turn on the vacuum pump to evacuate to 1 Torr;

[0027] (4) Pass H at a certain flow rate 2 Gas, adjust the ventilation valve of the vacuum chamber to keep the vacuum degree in the growth chamber constant at 20Torr; turn on the switch of the plasma processor and adjust the power to 250W; under this power, keep the hydrogen plasma gas bombarding the sample for 40 minutes;

[0028] (5) After the bombar...

Embodiment 3

[0031] (1) Use a quartz plate as a substrate, ultrasonically clean it in absolute ethanol and dry it in air;

[0032] (2) Put the single ZnO semiconductor single crystal structure stripped from the macroscopic ultra-long ZnO single crystal cluster on the silicon wafer, and only the two ends are bonded with silver paste; put it in an oven, bake at 120 ° C for 15 minutes, Then bake at 375°C for 20 minutes; make a single ZnO semiconductor single crystal structure firmly bonded to the silicon wafer, and prepare a sample for testing;

[0033] (3) Put the sample into the vacuum chamber, turn on the vacuum pump to evacuate to 2.5Torr;

[0034] (4) Pass H at a certain flow rate 2 Gas, adjust the ventilation valve of the vacuum chamber to keep the vacuum in the growth chamber constant at 16Torr; turn on the switch of the plasma processor and adjust the power to 380W; under this power, keep the hydrogen plasma gas bombarding the sample for 30 minutes;

[0035] (5) After the bombardmen...

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Abstract

This invention involves a low pressure macroscopic ZnO semiconductor single crystal material preparation method. First fix the crystal material on the substrate, put it in the plasma processor vacuum chamber, pass over H2 gas, regulate vacuum chamber ventilating valve to make the vacuity of the vacuum chamber keep at 10-20Torr, turns on the plasma processor switch, adjust the power of the processor to 170-380W to make hydrogen plasma gas bombard the sample for 30-60minutes to obtain low pressure light-emitting macroscopic ZnO semiconductor single crystal material.

Description

technical field [0001] The invention mainly relates to a preparation method of a low-voltage light-emitting macroscopic ZnO semiconductor single crystal material, belonging to the technical field of semiconductor optoelectronic materials and devices. technical background [0002] As we all know, ZnO, as a wide bandgap semiconductor material, has great application prospects in optoelectronic devices, so it has attracted widespread attention worldwide. At present, the main way to change the electrical properties of nano-ZnO single crystal materials in the world is by doping (Jr H.He, et al.Large-Scale Ni-Doped ZnONanowire Arrays and Electrical and Optical Properties, J.Am.CHEM.SOC .2005, 127, 16376-16377; William K. Liu, et al Spectroscopy of Photovoltaic and PhotoconductiveNanocrystalline Co 2+ -Doped ZnO Electrodes, J.Phys.Chem.B 2005, 109, 14486-14495), the light-emitting technology is generally to generate a PN junction inside ZnO, using the principle of light-emitting di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01S5/30C30B33/00C09K11/54
Inventor 郁可张宁朱自强李琼王翠翠
Owner EAST CHINA NORMAL UNIV
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