Method for preparing monodisperse copper sulfide semiconductor nano particles

A nanoparticle and copper sulfide technology, applied in the direction of copper sulfide, etc., can solve the problems of long reaction time, high production cost, easy product agglomeration, etc., and achieve the effect of uniform particle size, low cost and high yield

Inactive Publication Date: 2007-11-28
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
View PDF0 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods generally require longer reaction time, higher temperature and pressure, and special reaction devices, resulting in higher production costs.
In addition, the obtained product is easy to agglomerate and is difficult to be widely used

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing monodisperse copper sulfide semiconductor nano particles
  • Method for preparing monodisperse copper sulfide semiconductor nano particles
  • Method for preparing monodisperse copper sulfide semiconductor nano particles

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Take 50ml 0.08M Cu(NO 3 ) 2 solution, add 0.08M Na under stirring 2 S solution 60ml, react for 10-30 minutes. Then add an ethanol solution of N,N-dibutyl potassium dithioformate, and continue to stir and react for 4-8 hours. After the reaction, the product was centrifuged, and the obtained solid was rinsed with a large amount of ethanol-water mixed solution, and then dried in vacuum at 80° C., and the obtained black solid was copper sulfide semiconductor nanoparticles.

[0020] Figure 1 is a transmission electron micrograph of the prepared copper sulfide semiconductor nanoparticles, it can be seen that the prepared nanoparticles have a uniform particle size, no agglomeration, and an average particle size of 30nm. Figure 2 is the XRD pattern of the prepared nanoparticles, from which it can be seen that the prepared nanocomposite contains copper sulfide.

Embodiment 2

[0022] Take 2.0×10 -3 mol of CTAB dissolved in 50ml of 0.08M Cu(NO 3 ) 2 solution, add 0.08M Na under stirring 2 S solution 60ml, react for 10-30 minutes. Then add the ethanol solution of N,N-dioctyl potassium dithioformate, and continue stirring for 4-8 hours. After the reaction, the product was centrifuged, and the obtained solid was rinsed with a large amount of ethanol-water mixed solution, and then dried in vacuum at 80° C., and the obtained black solid was copper sulfide semiconductor nanoparticles.

[0023] FIG. 3 is a transmission electron micrograph of the prepared copper sulfide semiconductor nanoparticles. It can be seen that the prepared nanoparticles have a uniform particle size, no agglomeration, and an average particle size of 10 nm.

Embodiment 3

[0025] Take 4.0×10 -3 mol of CTAB dissolved in 50ml of 0.08M Cu(NO 3 ) 2 solution, add 0.08M Na under stirring 2 S solution 60ml, react for 10-30 minutes. Then add the ethanol solution of N,N-dibutyl sodium dithioformate, and continue to stir the reaction for 4-8 hours. After the reaction, the product was centrifuged, and the obtained solid was rinsed with a large amount of ethanol-water mixed solution, and then dried in vacuum at 80° C., and the obtained black solid was copper sulfide semiconductor nanoparticles.

[0026] FIG. 4 is a transmission electron micrograph of the prepared copper sulfide semiconductor nanoparticles. It can be seen that the prepared nanoparticles have a uniform particle size, no agglomeration, and an average particle size of 4nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

The present invention discloses process of preparing monodispersive nanometer granular copper sulfide semiconductor. The preparation process with common copper salt, sodium sulfide and N, N-dialkyl dithio formate as material is one simple chemical reaction process. The present invention has the features of facile material, simple process, high efficiency, high yield, high stability, etc, and is suitable for industrial production.

Description

technical field [0001] The invention relates to a preparation method of monodisperse copper sulfide semiconductor nanoparticles. Background technique [0002] Transition metal sulfides have attracted attention due to their potential applications in semiconductors, light-emitting devices, and superconductivity. In particular, nanomaterials exhibit special properties different from conventional bulk materials in light absorption, emission, thermoelectricity, and optoelectronics due to their large specific surface area and quantum size effects. As an important semiconductor material, copper sulfide is widely used in thermocouples, optical recording, optical filters and solar cells. However, copper sulfide nanoparticles are difficult to be widely used due to their inherent agglomeration characteristics. At present, many scholars have carried out research on the preparation technology of monodisperse copper sulfide nanoparticles, and developed a variety of preparation methods, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01G3/12
Inventor 陈建敏陈磊周惠娣万宏启
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap