Semiconductor storage device and manufacturing method thereof

Abstract

This invention discloses a semiconductor circuit and its manufacturing method, in which, said circuit includes a storage unit array and a peripheral loop, and the storage unit includes a vertical ciculating grid transistor and a groove capacitor under the transistor, the peripheral loop is composed of conventional plane transistors, the menufacturing method includes: forming a vertical circulation grid transistor array on the substrate of the semiconductor and forming a storage capacitor under the transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a dynamic random access memory and a manufacturing method thereof. Background technique [0002] DRAM (Dynamic Random Access Memory) is one of the most important memory storage components at present. Due to its high function but low manufacturing cost, it is widely used in the fields of computers, communications, and home appliances. A dynamic memory cell generally includes a capacitor as a storage source for storing data and a switch and pass transistor for controlling access to data in the capacitor. In the prior art, planar transistors and stacked capacitors are mostly used. FIG. 1A is a cross-sectional view of a DRAM storage unit composed of planar transistors and stacked capacitors in the prior art. As shown in FIG. 1A, a source 101 and a drain 102 are formed on a substrate 100, and a gate oxide layer 103, a polysilicon layer 104, and a metal silicide 1...

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Problems solved by technology

[0004] Therefore, the object of the present invention is to provide a semiconductor storage device and its manufacturing method to solve the problem in the prior art that the gate-around transistor DRAM manufacturing process is complicated and cannot be integrated with the peripheral circuit process of the planar transistor

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