Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Laminated film

A technology of metal laminated film and composition, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as damage to glass substrates, and achieve the effects of improved coverage, easy control of cone angle, and excellent economy

Inactive Publication Date: 2008-02-27
KANTO CHEM CO INC
View PDF6 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Recently, in order to prevent disconnection of the source line formed on the gate line, short circuit between the gate line and the source line, etc., it is often carried out to make the wiring on the substrate into a tapered shape (the taper angle is less than 90 degrees). (Patent Document 6), but the etchant in Patent Document 5 cannot satisfy this purpose
In addition, this etching solution also has the problem of causing damage to the glass substrate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laminated film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～26

[0054] As shown in FIG. 1 , a substrate in which titanium (700 Ȧ) / aluminum (2500 Ȧ) / titanium (200 Ȧ) was deposited on a glass substrate (1) by a sputtering method was prepared.

[0055] Then, a resist (4) was used to form a pattern on the glass / titanium / aluminum / titanium metal laminated film, and immersed in the etching solution (aqueous solution containing the components described in each example) of Examples 1 to 26 in Table 1. Medium (etching temperature is 30°C). Thereafter, after washing with ultrapure water and drying with nitrogen gas, the shape of the substrate was observed with an electron microscope. The results are shown in Table 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a compound etching liquor which can be used for etching metal laminated film formed on the semiconductor substrate. Said compound etching liquor contains fluoride and oxidant. The described fluoride is at least one kind selected from metal salt or ammonium salt of hydrofluoric acid, hexafluorosilicic acid, metal salt or ammonium salt of hexafluorosilicic acid, tetrafluoroboric acid and metal salt or ammonium salt of tetrafluoroboric acid.

Description

technical field [0001] The present invention relates to an etchant composition used for metal laminated films in gate electrodes, source electrodes, drain electrodes, and the like of liquid crystal displays. Background technique [0002] Aluminum or alloys with impurities such as neodymium, silicon, or copper added to aluminum are cheap and have very low resistance, so they are used in materials such as gates, sources, and drains of liquid crystal displays. [0003] However, since the adhesion (adhesion) between aluminum or aluminum alloy and the glass substrate as the base film is somewhat poor, and it is easily corroded by chemical liquid and heat, the upper and / or lower parts of aluminum or aluminum alloy A molybdenum or molybdenum alloy film is used as a laminated film as an electrode material, and the laminated film is etched together with an etchant using phosphoric acid or the like. [0004] In recent years, molybdenum or molybdenum alloys have been attracting attent...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/16C23F1/20C23F1/26H01L21/02
Inventor 清水寿和
Owner KANTO CHEM CO INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com