Optical false proof nondestructive testing apparatus
A non-destructive testing and optical anti-counterfeiting technology, applied in the field of applied optics, can solve the problems of complex anti-counterfeiting label production process, high production cost, sample damage, etc., and achieve the effect of improving operation safety, service life and efficiency
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Embodiment 1
[0028] Switch 1 is a light touch electronic switch with a spring, the model is KFC-A03-04.
[0029] The battery 2 is a 3V lithium battery.
[0030] The electronic circuit board 3 is an electronic circuit board with six pins, the positive and negative poles of the exciting light source 4 are connected to the a and b pins respectively, the positive and negative poles of the photodetector 10 are connected to the c and d pins respectively, and the output device 12 The positive and negative poles are connected to the e and f pins respectively, as shown in Figure 1.
[0031] The excitation light source 4 is a semiconductor laser (LD). At a room temperature of 20° C., the central wavelength of the emitted laser light is 980 nm, and the bandwidth of the emitted laser peak is 1 nm-3 nm. The power is 200mW.
[0032] Exciting light source bracket 5 is a circular plate structure with a certain thickness made of red copper material. There is a through hole on the left side of the circula...
Embodiment 2
[0043] The only difference between this embodiment and Embodiment 1 is: the excitation light source 4 adopts a light-emitting diode (LED), and the central wavelength of its emitted light is the same as the absorption wavelength of the infrared (up-conversion) fluorescent material, which is 980nm, and the bandwidth of the emitted laser peak 5nm-10nm.
Embodiment 3
[0045] The difference between this embodiment and embodiment 1 is:
[0046] The excitation light source 4 is a semiconductor laser (LD). At a room temperature of 20° C., the central wavelength of the emitted laser is 973 nm, the bandwidth of the emitted laser peak is 1 nm-3 nm, and the power is 200 mW. The halide material system doped with rare earth elements uses europium (Eu 3+ ) Yttrium (Yb 3+ ) co-doped silicate, after absorbing infrared light with a wavelength of 973nm, the emitted fluorescence characteristic line is visible orange light with a wavelength of 593nm.
[0047] The reflective film on the inner cavity wall of the left sub-chamber cover 14 has high reflectivity to the 973nm near-infrared light emitted by the excitation light source 4, and has high reflectivity to the 593nm visible fluorescence emitted by the infrared (up-conversion) fluorescent material.
[0048] The reflective film on the inner cavity wall of the right sub-chamber cover 15 has a high reflect...
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